A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate (original) (raw)
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2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013
This paper describes a C-band monolithic high power amplifier implemented with a 0.25 ȝm AlGaN/GaN HEMT process. The circuit has been designed for use in synthetic aperture radar antenna modules in space applications. The amplifier is made up of two stages: the final stage consists of eight devices for 9.6 mm of total periphery that are merged together to form a single power-bar. A quasi-inverse class-F regime for the HEMTs is implemented by harmonic tuning in order to achieve the best tradeoff between maximum output power and efficiency. When operating in pulsed mode with 50 ȝs pulse width and 10% duty cycle, the amplifier delivers about 40 watt with 21 dB of associated gain and 40% PAE over a 15% bandwidth centered at 5.4 GHz. The proposed MMIC HPA is a very valuable replacement for lower output power MMIC GaAs HPAs or hybrid HPAs, which are currently exploited at C-band for these applications. Index Terms-High Power Amplifier, MMIC, AlGaN/GaN, high efficiency power amplifiers.
A microstrip X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate
A two-stage high-power amplifier MMIC was realized with a chip size of 4.5 mm /spl times/ 3 mm operating between 8 GHz and 10 GHz based on a fully integrated microstrip AlGaN/GaN HEMT technology on s.i. SiC substrate. The MMIC device delivers a maximum pulsed output power of 8.9 W (39.5 dBm) at 8.5 GHz at V/sub DS/ = 31 V, 10 % duty cycle, and more than 6 dB gain compression level, and features a linear gain in excess of 20 dB.
physica status solidi (a), 2018
In this paper the recent use AlGaN/GaN high electron mobility transistors (HEMTs) and integrated circuits on both semi-insulating silicon carbide (SiC) and silicon substrates for radio communication in the microwave and mm-wave frequency range is described. AlGaN/GaN monolithically microwave integrated circuits (MMICs) are extremely useful for point-to-point (P2P)-links in the backbones of the 4th and upcoming 5th generation of mobile communication networks as power amplifiers, as they provide a great amount of linear power. At the same time GaN-based power conversion electronics has driven the advancement of the growth of AlGaN/GaN heterostructures on conductive silicon (111) substrates. This again has indirectly led to advancements in the growth capabilities of AlGaN/GaN heterostructures on highly-resistive (HR) silicon substrates. The paper gives examples of transistors and microstrip transmission-line-based MMICs realized in a direct comparison of GaN on s.i. SiC and GaN on HR-silicon. Constraints and performances for highly-efficient MMICs are discussed up to mm-wave frequencies beyond 100 GHz.
High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates
IEEE Transactions on Microwave Theory and Techniques, 2001
Broad-band high-power cascode AlGaN/GaN high electron-mobility transistor monolithic-microwave integrated-circuit (MMIC) amplifiers with high gain and power-added efficiency (PAE) have been fabricated on high-thermal conductivity SiC substrates. A cascode gain cell exhibiting 5 W of power at 8 GHz with a small-signal gain of 19 dB was realized. A nonuniform distributed amplifier (NDA) based on this process was designed, fabricated, and tested, yielding a saturated output power of 3-6 W over a dc-8-GHz bandwidth with an associated PAE of 13%-31%. A broad-band amplifier MMIC using cascode cells in conjunction with a lossy-match input matching network showed a useful operating range of dc-8 GHz with an output power of 5-7.5 W and a PAE of 20%-33% over this range. The third-order intermodulation products of the amplifiers under two-tone excitation were studied and third-order-intercept values of 42 and 43 dBm (computed using two-tone carrier power) for the lossy match and NDA amplifiers were obtained.
High power/high bandwidth GaN MMICs and hybrid amplifiers: design and characterization
Broadband microstrip and coplanar MMIC amplifiers featuring beyond 10 W for X-band radar applications are realized in a AlGaN/GaN HEMT technology on 2" s.i. SiC substrate. Single-stage and dual-stage demonstrators with flat gain from 1 GHz to 2.7 GHz and up to 40 W peak power in hybrid microstrip technology for basestation applications are presented. The performance illustrates the potential of this technology with very high bandwidth and superior power density in comparison to GaAs.
Ka-band AlGaN/GaN HEMT high power and driver amplifier MMICs
… Arsenide and Other …, 2005
In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 µm thick SiC substrate. The measured small-signal gain of the driver is 14 dB at 28.5 GHz and the measured output power is 28.6 dBm at 28 GHz. The power amplifier shows a measured small-signal gain of 10.7 dB at 25.5 GHz and output power of 34.1 dBm at 27 GHz. Both MMICs have a very good yield and performance for a first iteration design.
High power K-band GaN on SiC CPW monolithic power amplifier
2014 44th European Microwave Conference, 2014
This paper presents a high power amplifier at Kband (20.2-21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 µm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain over 20 dB for Vds=15V and measured output power of over 31 dBm at 20.2 Ghz. PAE of the amplifier is around 22% for desired frequency band. Initial radiation hardness tests indicate a suitable stability of the technology in space.
X band GaN Based MMIC Power Amplifier With 36.5dBm P 1-dB for Space Applications
An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AlGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is chosen for the simplicity and reduced cost of fabrication since CPW process has no via. High Electron Mobility Transistors (HEMTs) are matched for the 8 GHz-8.4GHz frequency band for maximum output power. The Amplifier has a small signal gain over 10 dB, output power of 36.5dBm at 1 dB gain compression point (P 1dB), 40% power added efficiency (PAE) at (P 1dB) in the desired frequency band (8 GHz-8.4 GHz) with V ds = 30V.
AlGaN-GaN HEMTs on SiC with CW power performance of >4 W/mm and 23% PAE at 35 GHz
IEEE Electron Device Letters, 2003
In this letter, continuous wave -band power performance of AlGaN-GaN high electron-mobility transistors grown on semi-insulating SiC substrates are reported. The devices, with gate lengths of 0.25 m, exhibited maximum drain current density of 1.1 A/mm and peak extrinsic transconductance of 285 mS/mm. At 35 GHz, an output power density of 4.13 W/mm with 23% of power-added efficiency (PAE) and 7.54 dB of linear gain were achieved at a drain bias of 30 V. These power results represent the best power density, PAE, and gain combination reported at this frequency. The drain bias dependence of the -band power performance of these devices is also presented. Index Terms-AlGaN, GaN, microwave power high electron mobility transistors (HEMTs).
This paper presents the progress of monolithic technology for microwave application, focusing on gallium nitride technology advances in the realization of integrated power amplifiers. Three design examples, developed for microwave backhaul radios, are shown. The first design is a 7 GHz Doherty developed with a research foundry, while the second and the third are a 7 GHz Doherty and a 7-15 GHz dual-band combined power amplifiers, both based on a commercial foundry process. The employed architectures, the main design steps and the pros and cons of using gallium nitride technology are highlighted. The measured performance demonstrates the potentialities of the employed technology, and the progress in the accuracy, reliability and performance of the process.