High-Temperature Mechanical Integrity of Cu-Sn SLID Wafer-Level Bonds (original) (raw)
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Demonstrating 170°C Low Temperature Cu-In-Sn wafer level Solid Liquid Interdiffusion Bonding
IEEE Transactions on Components, Packaging and Manufacturing Technology
The wafer-level Solid Liquid Interdiffusion (SLID) bonds carried out for this work take advantage of the Cu-In-Sn ternary system to achieve low temperature interconnections. The 100mm Si wafers had µ-bumps from 250µm down to 10µm fabricated by consecutive electrochemical deposition of Cu, Sn and In layers. The optimized wafer-level bonding processes were carried out by EV Group and Aalto University across a range of temperatures from 250C down to 170C. Even though some process quality related challenges were observed, it could be verified that high strength bonds with low defect content can be achieved even at a low bonding temperature of 170C with an acceptable 1-hour wafer-level bonding duration. The microstructural analysis revealed that the bonding temperature significantly impacts the obtained phase structure as well as the number of defects. A higher (250C) bonding temperature led to the formation of Cu3Sn phase in addition to Cu6(Sn,In)5 and resulted in several voids at Cu3Sn|Cu interface. On the other hand, with lower (200C and 170C) bonding temperatures the interconnection microstructure was composed purely of void free Cu6(Sn,In)5. The mechanical testing results revealed the clear impact of bonding quality on the interconnection strength.
Intermetallic Compounds - Formation and Applications, 2018
Solid-liquid interdiffusion (SLID) bonding for microelectronics and microsystems is a bonding technique relying on intermetallics. The high-melting temperature of intermetallics allows for system operation at far higher temperatures than what solder-bonded systems can do, while still using similar process temperatures as in common solder processes. Additional benefits of SLID bonding are possibilities of fine-pitch bonding, as well as thin-layer metallurgical bonding. Our group has worked on a number of SLID metal systems. We have optimized wafer-level Cu-Sn SLID bonding to become an industrially feasible process, and we have verified the reliability of Au-Sn SLID bonding in a thermally mismatched system, as well as determined the actual phases present in an Au-Sn SLID bond. We have demonstrated SLID bonding for very high temperatures (Ni-Sn, having intermetallics with melting points up to 1280°C), as well as SLID with low process temperatures (Au-In, processed at 180°C, and Au-In-Bi, processed at 90-115°C). We have verified experimentally the high-temperature stability for our systems, with quantified strength at temperatures up to 300°C for three of the systems: Cu-Sn, Au-Sn and Au-In.
Wafer Level Solid Liquid Interdiffusion Bonding: Formation and Evolution of Microstructures
Journal of Electronic Materials
Wafer-level solid liquid interdiffusion (SLID) bonding, also known as transient liquid-phase bonding, is becoming an increasingly attractive method for industrial usage since it can provide simultaneous formation of electrical interconnections and hermetic encapsulation for microelectromechanical systems. Additionally, SLID is utilized in die-attach bonding for electronic power components. In order to ensure the functionality and reliability of the devices, a fundamental understanding of the formation and evolution of interconnection microstructures, as well as global and local stresses, is of utmost importance. In this work a low-temperature Cu-In-Sn based SLID bonding process is presented. It was discovered that by introducing In to the traditional Cu-Sn metallurgy as an additional alloying element, it is possible to significantly decrease the bonding temperature. Decreasing the bonding temperature results in lower CTE induced global residual stresses. However, there are still sev...
Impact Factors on Low Temperature Cu-Cu Wafer Bonding
ECS transactions, 2014
Physical mechanism of Cu-Cu wafer bonding was studied as a base for low temperature (<200°C) wafer bonding process optimization. It was found out that for the successful bonding of two copper surfaces the following (classes of) impact factors have to be considered (I) contacting, even at atomic scale, (II) cleanliness of the surface, (III) diffusion enhancing materials properties and (IV) process conditions. From these fundamental findings subsequently low temperature metal thermo-compression Cu-Cu wafer bonding and even room temperature direct bonding was facilitated.
Optimized Cu-Sn Wafer-Level Bonding Using Intermetallic Phase Characterization
Journal of Electronic Materials, 2013
The objective of this study is to optimize the Cu/Sn solid-liquid interdiffusion process for wafer-level bonding applications. To optimize the temperature profile of the bonding process, the formation of intermetallic compounds (IMCs) which takes place during the bonding process needs to be well understood and characterized. In this study, a simulation model for the development of IMCs and the unreacted remaining Sn thickness as a function of the bonding temperature profile was developed. With this accurate simulation model, we are able to predict the parameters which are critical for bonding process optimization. The initial characterization focuses on a kinetics model of the Cu 3 Sn thickness growth and the amount of Sn thickness that reacts with Cu to form IMCs. As-plated Cu/Sn samples were annealed using different temperatures (150°C to 300°C) and durations (0 min to 320 min). The kinetics model is then extracted from the measured thickness of IMCs of the annealed samples.
In 3D electronic packages, stacked dies are connected vertically using through-silicon vias and solder micro-bumps, which are typically between 1 μm and 50 μm thick. Solder micro-joints undergo significant shear deformation due to various loading conditions, which can occur during usage of microelectronic devices, such as thermal cycling, mechanical bending, and drop impact. A limited amount of work has been done in shear deformation and failure mechanism of these joints. To explore this, 25-μm-thick joints of SAC305 solder between two Cu substrates were tested, containing three different Cu6Sn5-to-Cu3Sn ratios, in shear at strain rates from 1 s−1 to 100 s−1. The joint shear strength is correlated with observed failure mechanisms such as Sn, Cu6Sn5, Cu3Sn and Cu6Sn5/Cu3Sn interface failure. The growth kinetics of intermetallic compounds (IMCs) in thin Sn-3Ag-0.5Cu joints attached to Cu substrates have been analyzed, and empirical kinetic laws for the growth of Cu6Sn5 and Cu3Sn in thin joints are reported. By combining the shear deformation results, we infer that increased IMC content due to heat treatment deteriorates the mechanical properties of the joint due to the presence of disconnected incipient micro-cracks. Deformation and damage are controlled by the intermetallics, and not the strain-rate sensitive solder for the aged samples. Both Cu6Sn5 and the Cu6Sn5/Cu3Sn interface fracture are the dominant mechanisms with increasing aging under the shear deformation.
Au-Sn SLID Bonding: A Reliable HT Interconnect and Die Attach Technology
Metallurgical and Materials Transactions B, 2013
Au-Sn solid-liquid interdiffusion (SLID) bonding is an established reliable high temperature (HT) die attach and interconnect technology. This article presents the life cycle of an optimized HT Au-Sn SLID bond, from fabrication, via thermal treatment, to mechanical rupture. The layered structure of a strong and uniform virgin bond was identified by X-ray diffraction to be Au/f (Au 0.85 Sn 0.15 )/Au. During HT exposure, it was transformed to Au/b (Au 1.8 Sn 0.2 )/Au. After HT exposure, the die shear strength was reduced by 50 pct, from 14 Pa to 70 MPa, which is still remarkably high. Fractographic studies revealed a change in fracture mode; it was changed from a combination of adhesive Au/Ni and cohesive SiC fracture to a cohesive b-phase fracture. Design rules for high quality Au-Sn SLID bonds are given.
SLID Bonding for Energy Dense Applications – Thermo-Mechanics
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT), 2012
Solid-Liquid Inter-Diffusion (SLID) bonding is traditionally a technology used for high performance and high reliable die attach/interconnect applications. The generic properties of SLID allows the bonding to occur at a relatively low process temperature. However, when the bond is completed, the final joint has a melting point well above the process temperature. This makes it well suited as for high performance electronic assemblies. The typical bonding temperature of Cu-Sn SLID and Au-Sn SLID are 250–300 °C and 320–350 °C respectively. These temperatures compare to that of other high temperature (HT) electronic adhesives e.g. Staystik® 101G. The thermal performance of the SLID bond is superior to other electronic interface materials. This is due to the thin joint (∼ 10 μm) and the high thermal conductivity (∼ 60 W/m·K for Au-Sn). Thus, the thermal resistance of a SLID joint, about 2×10−3 cm2·K/W, is significantly lower than most other thermo-mechanical joints suitable for use in el...
Evaluation of High Temperature Joining Technologies for Semiconductor Die Attach
IMAPS other content, 2017
The development of novel high temperature die attach methods for semiconductor packaging enables use in harsh environments and unique opportunities for demanding industrial applications such as controls and monitoring for next generation engine and airframe platforms. Traditional die attach materials including lead solders and conductive adhesives cannot meet requirements of operation temperatures up to and exceeding 300°C due to their limited melting and glass transition temperatures [1]. The Manufacturing Technology Centre Ltd (MTC) has evaluated a range of high temperature die attach materials and processes for silicon and silicon carbide (SiC) semiconductors. Assembly processes were explored for bonding components with and without a back metallisation and with capability to support electrical back contact if required. Die attach methods evaluated include: Sinterable silver materials for back metallised semiconductor components Silver glass for non-back metallised semiconductor components Gold-silicon near eutectic preforms for non-back metallised semiconductor components Two types of substrates were selected including high temperature co-fired ceramic (HTCC) packages and gold or silver plated Kovar substrates. Test assemblies were subjected to accelerated life tests consisting of thermal ageing at 400°C and thermal cycling of-40°C to 200°C. These tests enabled the evaluation of the die attach materials after accelerated conditions of use. Reliability performance of the die attach materials was assessed using visual and X-ray inspection, mechanical shear testing and microstructure analysis. For sinterable silver materials, the test assemblies constructed using HTCC packages showed no significant reduction in shear strength after 1,008 hours ageing at 400°C. However shear strengths of the test assemblies constructed using Kovar substrates reduced by 95% of the initial values after ageing at 400°C for 336 hours. All test assemblies showed no significant reduction in adhesion after thermal cycling of-40°C to 200°C for 1,000 cycles. In addition, no apparent differences in shear strengths could be detected for sintered silver interconnections for gold and silver metallised semiconductor components. Gold-silicon bonding as performed using a near eutectic preform had limited performance as aged at 400°C. Silver glass test assemblies constructed using HTCC packages showed a 50% reduction in shear strength compared to the initial values after thermal ageing at 400°C for 1,000 hours. A similar reduction in adhesion was presented after thermal cycling of-40°C to 200°C for 1,000 cycles.