Growth of GaSb quantum dots on GaAs (111)A (original) (raw)

Journal of Crystal Growth, 2014

Molecular beam epitaxial growth of GaSb quantum Dots on (001) GaAs substrate with InGaAs insertion layer

Journal of Crystal Growth, 2015

Investigation of GaSb/GaAs Quantum Dots Formation on Ge (001) Substrate and Effect of Anti-Phase Domains

MRS Advances, 2016

In-mole-fraction of InGaAs Insertion Layers Effects on the Structural and Optical Properties of GaSb Quantum Dots Grown on (001) GaAs Substrate

ECTI Transactions on Computer and Information Technology (ECTI-CIT), 1970

Thin GaSb insertions and quantum dot formation in GaAs by MOCVD

Dieter Bimberg

Journal of Crystal Growth, 2000

Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

Andrei Schliwa

Physical Review B, 2012

GaSb Dots Grown on GaAs Surface by Metalorganic Chemical Vapour Deposition

Adam Babiński

Acta Physica Polonica A

GaSb/GaAs type-II quantum dots grown by droplet epitaxy

Kalyan Nunna

…, 2009

Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots

Dieter Bimberg

Journal of Nanotechnology, 2013

Molecular-beam epitaxy of InSb/GaSb quantum dots

Biswarup Satpati

(2007) Journal of Applied Physics, 101 (12), art. no. 124309, .

A Study of Quantum dots of GaSb

Maman Budiman

Journal of Mathematical and Fundamental Sciences, 2001

Interface structure of deposited GaSb on GaAs (001): Monte Carlo simulation and experimental study

Nejma FAZOUAN

Journal of Materials Science, 2011

Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition

Jer-shen Maa

Journal of Materials Science: Materials in Electronics, 2016

Morphology of self-assembled InSb/GaAs quantum dots on Ge substrate

Journal of Crystal Growth, 2017

Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer

Ana Beltran

Materials Letters, 2011

Raman and photoluminescence properties of type II GaSb/GaAs quantum dots on (001) Ge substrate

Electronic Materials Letters, 2016

High resolution electron microscopy of GaAs capped GaSb nanostructures

SERGIO I. MOLINA

Applied Physics Letters, 2009

Carrier dynamics in type-II GaSb/GaAs quantum dots

Dieter Bimberg

Physical Review B, 1998

Boron mediation on the growth of Ge quantum dots on Si (100) by ultra high vacuum chemical vapor deposition system

Zingway Pei

Materials Science and Engineering: B, 2004

TEM characterization of InAs/GaAs quantum dots capped by a GaSb/GaAs layer

Pedro Galindo

2008

Progress in the Growth and Characterization of Ge Quantum Dots and Islands

Nelson Rowell

MRS Proceedings, 2004

A strain relief mode at interface of GaSb/GaAs grown by metalorganic chemical vapor deposition

Kei Lau

Applied Physics Letters, 2011

Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001)

Elisa Maddalena Sala, Gernot Stracke

Temperature dependence of the quantum dot lateral size in the Ge/Si(100) system

Alexander Tonkikh

physica status solidi (b), 2003

GaSb and InSb Quantum Nanostructures: Morphologies and Optical Properties

MRS Advances, 2015

Structural differences between capped GaSb nanostructures grown by Stranski-Krastanov and droplet epitaxy growth modes

Lifan Yan

Journal of Applied Physics, 2017

An investigation of the crystalline nature for GaSb films on Si(111) at varied growth temperature and growth rate

A.A.Md. Monzur-Ul-Akhir

Japanese Journal of Applied Physics

GaAs-based triangular barrier photodiodes with embedded type-II GaSb quantum dots

Pavel Vitushinskiy

Applied Physics Express, 2016

Critical barrier thickness for the formation of InGaAs/GaAs quantum dots

David Gonzalez

Materials Science and Engineering: C, 2005

Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy

Shahram Ghanad-Tavakoli

Journal of Applied Physics, 2012

Anti-Phase Domain Induced Morphological Differences of Self-Assembled InSb/GaAs Quantum Dots Grown on (001) Ge Substrate

Journal of Crystal Growth, 2019