Deposition and Characterization of Thick Pb(Zr,Ti)O3 Films on Optical Fibers (original) (raw)

Fabrication and Characterization of PZT Fibered-Epitaxial Thin Film on Si for Piezoelectric Micromachined Ultrasound Transducer

Micromachines, 2018

This paper presents a fibered-epitaxial lead zirconate titanate (PZT) thin film with intermediate features between the monocrystalline and polycrystalline thin films for piezoelectric micromachined ultrasound transducer (pMUT). The grain boundaries confirmed by scanning electron microscopy, but it still maintained the in-plane epitaxial relationship found by X-ray diffraction analyses. The dielectric constant ( = 500) was relatively high compared to those of the monocrystalline thin films, but was lower than those of conventional polycrystalline thin films near the morphotropic phase boundary composition. The fundamental characterizations were evaluated through the operation tests of the prototyped pMUT with the fibered-epitaxial thin film. As a result, its piezoelectric coefficient without poling treatment was estimated to be = -10⁻-11 C/m², and thus reasonably high compared to polycrystalline thin films. An appropriate poling treatment increased and decreased . In addition, this u...

Optical fiber interferometer for measuring the d33 coefficient of piezoelectric thin films with compensation of substrate bending

Review of Scientific Instruments, 2002

An optical fiber interferometer for measuring the d33 coefficient of piezoelectric samples is described. Its configuration is based on the Mach-Zehnder interferometer, and a double incidence on the thin-film samples successfully suppresses the undesirable bending effect of the substrate. Detection of the small displacement is based on an active homodyne scheme. Results are reported for a bulk piezoelectric transducer (PZT) sample and a PZT thin-film incorporated in a microactuator.

Direct measurement of piezoelectric properties of Sol-Gel PZT films

Journal of The Korean Physical Society, 1998

PbZr0.53Ti0.47O3 films were deposited on Si-SiO2-Ta-Pt substrates via a conventional sol-gel procedure. Electrical properties of the films were: resistivity ca. 5 × 1011 Ωcm, relative dielectric permittivity 900-1100, remnant polarization ca. 20 μC/cm2, breakdown electric field larger than 50 MV/m. The deflection amplitude of piezoelectrically excited Si cantilevers, covered with SiO2-Ta-Pt-PZT-Al, was determined with the aid of a heterodyne Mach-Zehnder

Structural, ferroelectric and optical properties of PZT thin films

Physica B: Condensed …, 2005

We report on the structural, ferroelectric and optical properties of lead zirconate titanate (PZT) thin films (with a molar ratio of Zr: Ti:: 65: 35) deposited by sol–gel technique on ITO-coated corning 7059 glass substrates. A seed layer of PbTiO3 (0.1 μm) was coated by sol ...