Ultrafast carrier dynamics inBr+-bombarded InP studied by time-resolved terahertz spectroscopy (original) (raw)

Ultrafast dynamics of charge carriers in Br +-bombarded InP were studied using time-resolved terahertz spectroscopy. Carrier lifetimes and mobilities in various samples prepared with irradiation doses spanning from 10 9 up to 10 12 cm −2 were determined. The lifetime of photoexcited carriers appears to be determined primarily by the density of defects resulting from host-atom displacements while it is not significantly influenced by the Br-atom implantation. In the most irradiated sample, a carrier lifetime as short as 300 fs was found. All samples exhibit a high mobility ͑3000− 900 cm 2 V −1 s −1 ͒; the lower values correspond to a smaller irradiation dose. In selected samples, the density of traps along with electron and hole lifetimes was determined.