Interface structure of epitaxial TiSi2 on Si(lll) (original) (raw)

Proceedings, annual meeting, Electron Microscopy Society of America, 1992

Abstract

Among the transition metal silicides, TiSi2 is considered to be a reasonable choice for VLSI applications because it exhibits low resistivity, high temperature stability and compatibility with current processing steps. Thin film reaction of Ti on Si results in the formation of two different forms of TiSi2 which have been identified as the C49 and the C54 crystal structures. The structures are base centered and face centered orthorhombic, respectively. The C49 phase is metastable (ie. it is not represented in the binary phase diagram), and forms at temperatures of 450 to 600°C. The stable C54 phase forms after high temperature annealing to > 650°C. In this paper the relation of the morphology and interface structures of epitaxial C49 TiSi2 on Si(l11) are described.The TiSi2/Si structures were prepared in a UHV system. The TiSi2 surface morphologies were examined by SEM and plan view TEM, and the interfaces were studied by TEM and HRTEM. The phase identification was obtained from t...

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