Properties of ZrO2 thin films prepared by laser ablation (original) (raw)

Materials Science in Semiconductor Processing, 2002

Abstract

ZrO2 thin films have been prepared by laser ablation of Zr or ZrO2 targets in oxygen reactive atmosphere. The influence of the deposition parameters as oxygen pressure and target composition on the structure and morphology of the deposited layers has been studied. Scanning electron microscopy, secondary ion mass spectroscopy and dielectric constant measurements have been performed to characterize the deposited

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