Temperature Dependence of Functional Properties of Graphene Hall-Effect Sensors Grown on Si Face and C Face of 4H-SiC Substrate (original) (raw)

Advances in Intelligent Systems and Computing, 2015

Abstract

Paper presents the results of investigation of the temperature influence on the basic functional properties of graphene Hall-effect sensors. The measurement system utilizing Helmholtz coils as a source of external magnetic field and environmental chamber for setting temperature was developed. Two types of monolayer graphene structures grown on both Si and C face of SiC substrate were investigated in the room temperature (about 20 oC) and their functional properties were compared. Next, the temperature influence on functional properties of both types of graphene structures was investigated using environmental chamber. The results of measurements are presented as charts and analyzed in the paper. On the basis of the results, conclusions were formulated, which are included in the last section of the paper.

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