Acceptor-bound exciton recombination dynamics in p-type GaN (original) (raw)

Dynamics of the neutral-acceptor-bound exciton transition (the I1 line) in a Mg doped p-type GaN epitaxial layer grown by metalorganic chemical vapor deposition (MOCVD) have been studied by time-resolved photoluminescence emission spectroscopy. Two emission lines in the I1 transition region have been resolved in the time-resolved spectra, possibly due to the existence of two energy states of the Mg impurities after postgrowth thermal annealing. The recombination lifetimes of the acceptor-bound exciton transition have been measured under different conditions including temperature, excitation intensity, and emission energy. From these measurements, a value of about 450 ps for the radiative recombination lifetime has been obtained, which is an important physical quantity for optoelectronic device applications based on GaN.