HgCdTe heterostructures on Si(310) substrates for infrared photodetectors (original) (raw)

Abstract

Molecular beam epitaxial growth of HgCdTe solid solutions on silicon substrates of 76.2 mm diameter was studied. Conditions for producing HgCdTe/Si(310) heterostructures for the spectral range of 3-5 μm which are suitable for fabricating high-quality devices were determined. A 4 × 288 photodetector was fabricated by hybrid assembly of an array photosensitive element with a multiplexer. Results on the sensitivity and stability of this photodetector to thermal cycling are given.

Loading...

Loading Preview

Sorry, preview is currently unavailable. You can download the paper by clicking the button above.

References (12)

  1. Yu.
  2. G. Sidorov, S. A. Dvoretskii, V. S. Varavin, et al., "Molecular-Beam Epitaxy of Cadmium-Mercury-Tellurium Solid Solutions on Alternative Substrates," Fiz. Tekh. Poluprovodn. 35 (9), 1092-1101 (2001).
  3. W. Kern and D. A. Puotinen, "Cleaning Solutions Based on Hydrogen Peroxide for Use In Silicon Semiconductor Technology," RCA Rev. 31, 187-206 (1970).
  4. D. B. Fenner, D. K. Biegelsen, and R. D. Bringans, "Silicon Surface Passivation by Hydrogen Termination: A Comparative Study of Preparation Methods," J. Appl. Phys 66, 419 (1989).
  5. P. Mackett, "Properties of Narrow Gap Cadmium-Based Compounds," in EMIS Datareview Series, Ed. by P. Capper (INSPEC, London, 1994), No. 10, p. 188.
  6. I. V. Sabinina, A. K. Gutakovsky, Yu. G. Sidorov, et al., "Defect Formation during Growth of CdTe (111) and HgCdTe Films by Molecular Beam Epitaxy," J. Cryst. Growth. 117 (1-4), 238-243 (1992).
  7. T. Aoki, Y. Chang, and G. Badano, et al., "Electron Microscopy of Surface-Crater Defects on HgCdTe/CdZnTe(211B) Epilayers Grown by Molecular-Beam Epitaxy," J. Electron. Mater. 32, 703 (2003).
  8. I. V. Sabinina, A. K. Gutakovsky, Yu. G. Sidorov, and A. V. Latyshev, "Nature of V-Shaped Defects in HgCdTe Epilayers Grown by Molecular Beam Epitaxy," J. Crystal Growth 274 (3/4), 339-346 (2005).
  9. I. V. Sabinina, A. K. Gutakovsky, Yu. G. Sidorov, et al. "Phase Contrast Atomic-Force Microscopic Study of Antiphase Domains in HgCdTe Films on Silicon," Pis'ma Zh. Eksp. Teor. Fiz. 82 (5/6), 326 (2005).
  10. M. V. Yakushev, D. V. Brunev, K. N. Romanjuk, et al., "Morphology of the Si(310) Substrate Surface Used for Molecular-Beam Epitaxy of HgCdTe: I. Clean Si surface," Poverkhnost' 2, 41-47 (2008).
  11. A. D. van Rheenen, H. Syversen, R. Haakenaasen, et al., "Temperature Dependence of the Spectral Response of Lateral, MBE-Grown, Ion-Milled, Planar, CdHgTe Photodiodes," Phys. Scr. T126, 101-104 (2006).
  12. R. Haakenaasen, T. Moen, T. Colin, et al., "Depth and Lateral Extension of Ion Milled pn Junctions in CdHgTe from Electron Beam Induced Current Measurements," J. Appl. Phys. 91, 427-432 (2002).