PNP Resonant Tunneling Light Emitting Transistor (original) (raw)

Three terminal double barrier resonant tunneling devices based on the direct contacting of the quantum well

1997

Three terminal (31) Double Barrier Resonant Tunneling (DBR1) devices with the base contact to the quantum well have been fabricated from GaAs/AlAs material system. The plane of the very thin quantum well is reached using high selective etching processes and a nonalloyed Ti/Pt/Au metallization scheme is used to obtain a Schottky base contact. DC and AC electrical measurements demonstrate that the base contact lies on the quantum well of the device DBRT structure and the base voltage modulates the collector current. It is shown that the electrical characteristics of these devices enlarge the possibilities of investigation of the DBRT structures and suggest important applications in high-speed electronics.

Charge buildup effects in asymmetric p-type resonant tunneling diodes

Microelectronics Journal

We have investigated p-doped GaAs-AlAs resonant tunneling devices with asymmetric barriers under optical excitation. Transport and photoluminescence measurements were performed under identical bias conditions as a function of the light excitation intensity. We have observed the development of additional peaks, induced by illumination, between the main light- and heavy-hole resonances in the current-voltage characteristics (I(V)). We describe the behavior of these photo-induced peaks under a magnetic field parallel to the current. We propose that the observed properties are related to resonant tunneling of photoinduced electrons and associated excitonic effects.