Influence of Annealing Temperature on the Properties of ZnO Thin Films Grown by Sputtering (original) (raw)

Zinc oxide (ZnO) thin films were deposited by RF magnetron sputtering onto ITO coated soda-lime glass substrates. The effects of annealing in temperature range of 250 to 450°C on the structural and optical properties of the ZnO films have been studied. The crystalline structure, surface topology, morphology, optical properties of the films were determined using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and UV-Visible Spectrometry, respectively. X-ray diffraction measurement showed that the annealed ZnO films were polycrystalline in nature with (002), (101) and (001) oriented crystallites of hexagonal wurtzite structure. Crystalline property and grain size of the films were found to increase after annealing. The optical band gap of ZnO films initially blue shifted (3.1-3.23 eV) when annealed at 400°C and further red shifted in the range of 3.23 to 3.1 eV being annealed at 250 to 450°C range. From the UV spectroscopy, the films showed transmittance over 85% in the optical bandgap spectrum. All these results indicate that post deposition annealing improves the film quality with reduced roughness and better crystalline properties that can be utilised as buffer layer in the CIGS or CdTe thin film solar cells.

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