Thickness-dependent valence-band photoemission from thin InAs and GaAs films (original) (raw)

Preparation by molecular beam epitaxy and atomic layer molecular beam epitaxy and characterization of InAs layers 1 monolayer thick in GaAs-based structures

Claudio Ferrari

Materials Science and Engineering: B, 1994

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Theoretical Investigations for Strain Relaxation and Growth Mode of InAs Thin layers on GaAs(111)A

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Photoemission study of a thin epitaxial InAs layer on InP(001)

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Semicoherent interface formation and structure in InAs/GaAs(111)A heteroepitaxy

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Surface Science, 1998

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Spatially resolved optical spectroscopy of GaAs islands on InAs (111)

Pier Paolo Lottici

Microelectronics Journal, 1997

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Heteroepitaxial growth of thin InAs layers on GaAs(100) misoriented substrates: A structural and morphological comparison

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Growth and coalescence evolution of InAs on GaAs by molecular beam epitaxy

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Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction

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Journal of Applied Physics, 2015

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Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix

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Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study

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Influence of the Growth Mode on the Microstructure of Highly Mismatched InAs/GaAs Heterostructures

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Strain and optical transitions in InAs quantum dots on (001) GaAs

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Strain Effects on Optical Properties of (In, Ga) As-Capped InAs Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (113) A Substrate

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Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate

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Depth dependent lattice disorder and strain in Mn-implanted and post-annealed InAs thin films

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Negative band gap bowing in epitaxial InAs/GaAs alloys and predicted band offsets of the strained binaries and alloys on various substrates

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