A 160-GHz low-noise downconversion receiver front-end in a SiGe HBT technology (original) (raw)
Related papers
60 GHz SiGe HBT downconversion mixer
2007 European Microwave Integrated Circuit Conference, 2007
This work presents an active downconverter targeted for integration in 60 GHz high speed data communication RF front-ends. The designed downconverter has been realized in 0.25 µm SiGe BiCMOS technology with f t around 200 GHz. The downconverter consists of a single balanced mixer with an onchip balun for differential to single ended conversion. High linearity and bandwidth are the main design goals rather than high gain. A clear-cut investigation of the applied bottom up design approach will be presented with emphasis on modeling the critical on-chip signal path interconnects, matching and filtering components. The design and applied methodologies will be justified by comparing the measured and simulated performances. At 60 GHz an input 1-dB power compression of -5 dBm, 2.5 dB conversion gain and a gain variation around 2 dB from 50 to 70 GHz, are measured. Current consumption of the mixer core is 4.7 mA from a 3.3 V supply and the active chip area is 0.48 mm 2 .
A 60 GHz Monolithic Upconversion Mixer in SiGe HBT Technology
2007 IEEE International Workshop on Radio-Frequency Integration Technology, 2007
A 60 GHz monolithic upconversion mixer using a 0.25 μm SiGe-HBT technology with f T and f max § 200 GHz is demonstrated in this work. The mixer is based on the Gilbert micromixer principle. It has broadband matched single-ended IF and LO inputs. An active LO balun is implemented on-chip to convert the single-ended LO signal into a differential one for driving the Gilbert cell. A shorted stub is inserted to the current source of the balun to improve the common mode rejection. A push-pull balun is used to convert the differential output into a single-ended one. Thus, the IF, LO and RF ports are single-ended facilitating the on-wafer measurements. At 0 dBm applied LO power the fully integrated upconversion micro mixer has a conversion gain of -6.5 dB and 0 dBm of input power under 1 dB gain compression where IF, LO and RF frequencies are at 5 GHz, 55 GHz and 60 GHz. Supply voltage and current consumption were 3.3 V and 24 mA, respectively. To the best of our knowledge, this is the first reported highly linear 60 GHz upconversion micro mixer in SiGe-HBT technology.
2003
Abstract The authors have demonsraed integrated receiver components addressing 26 GHz Local Mulipoint Disribution Services (LMDS) applications using a standard SiGe HBT MMIC process wih an layouted emiter width of 0.8 μm. Compact circuit layout and transistor strucure optimization are applied to a mature Si/SiGe technology, resulting in low-cost integrated circuits enabling consumer-oriented systems at 26 GHz. The integrated receiver components are a downconverter and a satic 2: 1 divider.
33rd European Microwave Conference, 2003, 2003
The authors have demonstrated integrated receiver components addressing 26 GHz Local Multipoint Distribution Services (LMDS) applications using a standard SiGe HBT MMIC process with an layouted emitter width of 0.8 ¡ m. Compact circuit layout and transistor structure optimization are applied to a mature Si/SiGe technology, resulting in low-cost integrated circuits enabling consumer-oriented systems at 26 GHz. The integrated receiver components are a downconverter and a static 2:1 divider. The downconverter IC consists of a preamplifier and a mixer with an IF buffer. The conversion gain is determined to be 24 dB for an intermediate frequency of 200 MHz, and the maximum frequency of operation for the divider is 28.2 GHz.
Low Power Wideband Receiver and Transmitter Chipset for mm-Wave Imaging in SiGe Bipolar Technology
IEEE Journal of Solid-State Circuits, 2012
This paper presents a chip-set aiming at high resolution imaging systems for people screening applications operating near the W-band. The center frequency of operation is 78GHz with a 3-dB bandwidth of at least 7GHz for optimal image resolution and depth of focus. The frequency generation for both receive and transmit chips consists of a frequency quadrupler consisting of 2 cascaded active Gilbert mixers. The receiver RFIC contains 4 channels including LO generation and distribution. The measured receiver conversion gain is 23dB with a SSB NF below 10dB over a wide frequency range from 70GHz up to 82GHz. The transmitter RFIC includes LO generation, distribution and 4 output amplifiers with an output power of more than 0 dBm in a frequency range from 77GHz to 85GHz. Both receiver and transmitter ICs are supplied from a single 3.3V supply voltage and the power consumption per channel is below 160mW.
Low-noise, low-power wireless frontend MMICs using SiGe HBTs
IEICE TRANSACTIONS ON …, 1999
Silicon-based monolithic microwave integrated circuits (MMICs) present an interesting option for low-cost consumer wireless systems. SiGe/Si heterojunction bipolar transistors (HBTs) are a major driving force behind Si-based MMICs, because they offer excellent microwave performance without aggressive lateral scaling. This article reviews opportunities for receiver frontend components (low-noise amplifiers and mixers) using SiGe HBTs. key words: Ë Ð ÓÒ¹ ÖÑ Ò ÙÑ¸Û Ö Ð ××¸Ö Ú Ö׸ Ø ÖÓ ÙÒ ¹ Ø ÓÒ ÔÓÐ Ö ØÖ Ò× ×ØÓÖ×¸Ñ ÖÓÛ Ú Ö Ù Ø׸ Ð ØÖÓÒ ÒÓ ×
Analog Integrated Circuits and Signal Processing, 2018
This paper presents the design of a millimeter-wave wideband receiver front-end in a 0.13 lm SiGe BiCMOS technology for phased array applications. The receiver front-end is suitable for a phased array time-division duplexing communication system where both the transmitter and the receiver share the same antenna. The monolithic microwave integrated circuit front-end comprises of quarter-wave shunt switches, a low-noise amplifier (LNA), an active phase shifter and a buffer amplifier. The quarter-wave shunt switch is designed using reverse-saturated SiGe HBTs. The transformer-based LNA utilizes a common-emitter amplifier at the first stage and a cascode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The designed switch is incorporated in the input matching network of the LNA. The active phase shifter consists of variable gain amplifiers driven by a polyphase filter-based quadrature generator. The receiver front-end achieves a measured gain of 18.5 dB and a noise figure of 9 dB with a 3 dB bandwidth of 23 GHz from 56 to 79 GHz. The receiver phase can be tuned continuously from 0 to 360. An output referred 1-dB compression point of À 7.4 dBm is achieved at 70 GHz. The receiver consumes 116 mW of DC power and occupies a core area of 1800 lm  475 lm.
A BiCMOS Technology Featuring a 300/330 GHz (fT/fmax) SiGe HBT for Millimeter Wave Applications
2006 Bipolar/BiCMOS Circuits and Technology Meeting, 2006
We present a 0.13 gm SiGe BiCMOS technology for millimeter wave applications. This technology features a high performance HBT (fT = 300 GHz /fmax = 330 GHz) along with various newly developed millimeter wave features, such varactor, Schottky and p-in diodes and other back end of line passives. Index Terms-Silicon bipolar/BiCMOS process technology, Millimeter wave bipolar integrated circuits, Millimeter wave devices, Heterojunction bipolar transistors, Silicon Alloys.
SiGe bipolar transceiver circuits operating at 60 GHz
Solid-State Circuits, …, 2005
A low-noise amplifier, direct-conversion quadrature mixer, power amplifier, and voltage-controlled oscillators have been implemented in a 0.12-m, 200-GHz T 290-GHz MAX SiGe bipolar technology for operation at 60 GHz. At 61.5 GHz, the two-stage LNA achieves 4.5-dB NF, 15-dB gain, consuming 6 mA from 1.8 V. This is the first known demonstration of a silicon LNA at V-band. The downconverter consists of a preamplifier, I/Q double-balanced mixers, a frequency tripler, and a quadrature generator, and is again the first known demonstration of silicon active mixers at V-band. At 60 GHz, the downconverter gain is 18.6 dB and the NF is 13.3 dB, and the circuit consumes 55 mA from 2.7 V, while the output buffers consume an additional 52 mA.