Morphological and Structural Properties of CVD Deposited Titanium Aluminium Nitride (TiAlN) Thin Films (original) (raw)
Related papers
Journal of Non-Crystalline Solids, 2008
A TiN x O y (TiNO) material system has been synthesized in thin film form for the first time using a pulsed laser deposition process. X-ray diffraction and X-ray photoelectron spectroscopy measurements have been carried out to show partial oxidation of TiN to TiNO. The current (I)-voltage (V) characteristics recorded from TiNO films sandwiched between indium tin oxide (ITO) and gold (Au) layers and/or copper (Cu) electrodes have shown that the I-V curves lie in the first and third quadrants (i.e., both I and V are either positive or negative) in the dark conditions, while the I-V curves lie in the second and fourth quadrants (i.e., I and V with opposite sign) in the illuminated conditions. The positive sign of power (I 9 V = Positive) under dark conditions indicates dissipation of power in the TiNO system, while the negative sign of the power (I 9 V = Negative) under optical illumination indicates the power generation capability of TiNO system. The bandgap of the TiNO thin film samples, measured using ultra violet (UV)-visible (400-800 nm) spectroscopy, was found to be * 1.6 eV. As the number of photocatalysts/semiconductors that are active under the visible light irradiation is very limited, our approach to develop a unique visible-light-driven TiNO photoactive material system can open a new avenue for the realization of novel optical devices.
Influence of deposition parameters on optical properties of titanium nitride thin films
1995
The thin titanium nitride films deposited on glass in a planar d.c. magnetron configuration have been optically investigated. The influence of the nitrogen partial pressure, substrate bias and film thickness as deposition parameters on the transmission (Vis) and the reflectance (Vis, FIR) spectra of the samples was studied. The analysis of surface properties of TiN films was also made by spectroscopic ellipsometry for different deposition conditions. The data were compared with the similar spectrum of a gold evaporated film.
Brazilian Journal of Physics, 2022
Titanium aluminum nitride (TiAlN) thin films were deposited on glass and stainless steel substrate using a reactive DC magnetron sputtering system, with a mixture of pure nitrogen and argon gases, for different deposition times of 3, 5, and 7 min. The structural properties like phase’s formation and transition, elemental composition, and vibration modes were investigated by X-ray diffraction, energy-dispersive X-ray analysis, and Raman spectroscopy. The morphological properties were analyzed by scanning electron microscopy (SEM). The mechanical and tribological properties in terms of hardness and friction coefficient were determined using the nanoindentation technique and tribometer. It has been found that the films without nitrogen content have a crystalline structure, while the TiAlN films obtained after 3 and 5 min of deposition time exhibit amorphous structures. Films deposited after 7 min of deposition time have TiAlN and oxide phases. The Raman spectroscopy reveals the appearance of TO/LO and 2O modes for all layers and the acoustic modes of second order (2A) for only the TiAl films. SEM images show that the layer thicknesses do not change significantly; however, the film morphology changes with deposition time and becomes denser. The composition of all layers shows an increase of N content and a decrease of Al content, which affect the film mechanical properties. Results from mechanical characterization confirm that the hardness and Young modulus increase with increasing nitrogen content and decreasing Al content, while the friction coefficient significantly decreases.
Structure and optical properties of thin titanium films deposited on different substrates
Journal of Materials Science, 1987
Thin films of titanium were deposited on different substrates at room temperature. Measurements were made of the optical constants and of the transmittance of titanium films evaporated on to fused quartz. Films of titanium 10 to 40nm thick were found to have quite uniform transmittance throughout the visible spectrum. Because titanium getters strongly during its evaporation, pure and compact titanium films can only be produced by fast evaporation under extremely good vacuum conditions. All films prepared for optical measurements, for X-ray and for scanning electron microscopy studies were, therefore, deposited at a pressure ~ 10-4 Pa and with deposition rate ~4nmsec-1. The measurements were made using a Beckman double-beam spectrophotometer UV 5230, Siemens D 500 X-ray diffractometer, and SEMCO nanolab 7 scanning electron microscopy.
Significance of Al on the morphological and optical properties of Ti1−xAlxN thin films
Materials Chemistry and Physics, 2011
TiN and Ti 1−x Al x N thin films with different aluminum concentrations (x = 0.35, 0.40, 0.55, 0.64 and 0.81) were synthesized by reactive magnetron co-sputtering technique. The structure, surface morphology and optical properties were examined using Grazing Incidence X-ray Diffraction (GIXRD), Atomic Force Microscopy (AFM), Raman spectroscopy and spectroscopic ellipsometry, respectively. The structure of the films were found to be of rocksalt type (NaCl) for x = 0.0-0.64 and X-ray amorphous for x = 0.81. AFM topographies show continuous mound like structure for the films of x between 0.0 and 0.64, whereas the film with x = 0.81 showed smooth surface with fine grains. Micro-Raman spectroscopic studies indicate structural phase separation of AlN from TiAlN matrix for x > 0.40. Ti 1−x Al x N has the tendency for decomposition with the increase of Al concentration whereas c-TiN and hcp-AlN are stable mostly. The optical studies carried out by spectroscopic ellipsometry measurements showed a change from metallic to insulating behavior with the increase in x. These films are found to be an insulator beyond x = 0.81.
Thin Solid Films, 2001
Materials strength is determined by the chemical bonding and the microstructural features; both can be changed by adding various amounts of constituent atoms. Nanostructure and hardness of titanium aluminum nitride thin films with different compositions prepared by plasma enhanced chemical vapor deposition were investigated in this study. The phase and microstructure of Ti1−xAlxN deposited were characterized by X-ray diffraction, scanning
Le Journal de Physique IV, 1993
A series of titanium compounds, Ti(NMe,),, t-BuTi(NMe,),, [Ti&-N-t-Bu)(-NMe,),],, Tie-BUDAD), and CpTiC7H7, have been screened in combination with NH, for their suitability as precursors for the CVD of titanium nitride films at substrate temperatures of 300-600°C and a system pressure of 1.5 Torr. The best TIN layers have been grown using t-BuTi(NMe,), and NH,, from which an 0.8 pm thick layer deposited at 400°C. showed a resistivity of 1.4.10.~ n -c m and contained 5 atom% carbon and 6 atom% oxygen.
Thin Solid Films, 1996
Titanium atuminium nitride thin films have been deposited on glass slides using a dual unbalanced d.c, magnetmn sputter arrangement with separate titanium and aluminium targets, A range of TilAIIN compositions were produced by varying the aluminiton target magnetron current. The thin films were then examined using an utomic fo~ce microscope (AFM) and a field emission scanning electron microscope. Alumininm, titanium and nitrogen compnsitions (wt.%) were determined by using energy dispersive X-my spectroscopy. It was found that as the aluminium msgnetron cut-cent increased from 0.l to 0A A, the titanium decreased from 77 wt.% to 53 wt,%, the aluminium increased from 6 wt,% to 25 wi,% and the colom" chtmged from gold to a blue-grey. An increase in the aluminium content had a significant effect on the grain size of the film. Surface measurement analysis using the AF'M results revealed that as the aluminium content increased both the rms roughness (6.5 nm ~ 3.2 am) and groin size (120 am-* 90 nm) decreased. It is believed that the above effects could result from the increase in aluminium atom bombardment rate with the higher aluminium magnetron current.