Photoluminescence and minority carrier lifetime of quinary GaInAsSbBi grown on GaSb by molecular beam epitaxy (original) (raw)
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Analysis of recombination processes in 0.5–0.6 eV epitaxial GaInAsSb lattice-matched to GaSb
2004
This work sununanzes recent data on minority carrier lifetime in n-and p-type double heterostructures (DHs) of 0.5-0.6 eV GalnAsSb confined with GaSb and AIGaAsSb cap layers. Recombination times were measured by time-resolved photoluminescence (TRPL) and by optical frequency response (OFR) to sinusoidal excitation. It was shown that one of the mechanisms responsible for interface recombination in GaSb/GalnAsSb/GaSb DHs is thermionic emission of carriers over the heterobarrier. Considerable improvement of carrier confinement was obtained with I eV AIGaAsSb cap layers. Optimization of the epitaxial growth resulted in a recombination velocity at GalnAsSb/ AIGaAsSb interface as low as 30 crn/s.
Growth of GaSb-rich and InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD
1998
MOCVD growth and characterization of GaSb-rich and InAs-rich GaInAsSb on GaSb substrates was investigated. The surface of InAs-rich GaInAsSb epilayers showed morphological features very different from those on GaSb-rich films. Solid compositions of Ga 1\x In x As y Sb 1\y films were dependent on growth temperature and the input source ratios, such as Ga/III ratio and Sb/V ratio. Unintentionally doped InAs-rich GaInAsSb showed n-type conduction, and GaSb-rich samples were p-type. A room temperature electron mobility of 5000 cm2 v\1 s\1 with electron concentration of 3.6;1017 cm\3 for InAs-rich films was obtained. On the other hand, a hole mobility of 360 cm2 v\1 s\1 with a hole concentration of 1;1017 cm\3 for GaSb-rich samples was achieved.
Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys
Molecular beam epitaxy is used to grow Ga 1Ày In y Sb 1Àx Bi x (y 5.5% and x 2.5%) and Al y Ga 1Ày Sb 1Àx Bi x alloys (y 6.6% and x 2.0%). The alloy composition and film thickness are determined by high resolution x-ray diffraction. The band gap of the alloys is determined by photomodulated reflectance (PR) spectroscopy. The band gap energy reduces with increasing In and Bi contents and decreasing Al content. The band gap energy reduction between 15 and 290 K is in the range of 60-75 meV, somewhat lower than the 82 meV for GaSb. The broadening of the band gap-related PR feature is between 16 and 28 meV. V
Growth and characterization of InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD
Journal of Crystal Growth, 1998
MOCVD growth and characterization of InAs-rich GaInAsSb on GaSb substrates was investigated. High quality mirror-like surfaces with a minimum lattice mismatch of 0.4% was obtained. The surface of InAs-rich GaInAsSb epilayer shows morphological features much different from that of GaSb-rich films. Solid compositions of InAs-rich films were dependent on growth temperature. InAs-rich GaInAsSb shows n-type conduction, which is the opposite of GaSb-rich samples. A room temperature electron mobility of 5000 cm/V) s with electron concentration of 3.6;10 cm\ was obtained.
Reduction of interfacial recombination in GaInAsSb/GaSb double heterostructures
Applied Physics Letters, 2002
Minority carrier lifetimes in 0.55 eV band-gap GaInAsSb epitaxial layers that are double capped with GaSb or AlGaAsSb layers were determined using time-resolved photoluminescence. It was found that accumulation of electrons at the p-doped GaInAsSb/GaSb type-II interface contributes significantly to the interfacial recombination velocity S, which was measured to be 3100 cm/s. The use of heavily p-doped GaSb cap layers was proposed to eliminate the potential well of electrons and barrier for holes at the interface. Increasing the GaSb cap doping level from 1ϫ10 16 to 2 ϫ10 18 cm Ϫ3 resulted in a 2.7 times reduction of S down to 1140 cm/s. The smallest value of S was determined to be 720 cm/s, which was obtained for structures with AlGaAsSb cap layers that have no valence band offset.
Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications
physica status solidi (b), 2007
In the past few years, GaInNAsSb has been found to be a potentially superior material to both GaInNAs and InGaAsP for communications wavelength laser applications. It has been observed that due to the surfactant role of antimony during epitaxy, higher quality material can be grown over the entire 1.2 -1.6 µm range on GaAs substrates. In addition, it has been discovered that antimony in GaInNAsSb also works as a constituent that significantly modifies the valence band. These findings motivated a systematic study of GaInNAsSb alloys with widely varying compositions. Our recent progress in growth and materials development of GaInNAsSb alloys and our fabrication of 1.5 -1.6 µm lasers are discussed in this paper. We review our recent studies of the conduction band offset in (Ga,In) (N,As,Sb)/GaAs quantum wells and discuss the growth challenges of GaInNAsSb alloys. Finally, we report record setting long wavelength edge emitting lasers and the first monolithic VCSELs operating at 1.5 µm based on GaInNAsSb QWs grown on GaAs. Successful development of GaInNAsSb alloys for lasers has led to a much broader range of potential applications for this material including: solar cells, electroabsorption modulators, saturable absorbers and far infrared optoelectronic devices and these are also briefly discussed in this paper.
Surface Review and Letters, 2002
Tellurium-doped GaInArSb epitaxial layers with electron concentration in the range of 3 × 1017 – 2 × 1020 cm -3 are grown at 530°C on (100) GaSb substares by liquid phase epitaxy (LPE). To dope the layers we used pellets of Sb 3 Te 2 in preparing growth melts. The low temperature photoluminescence (PL) spectra (20 K) showed a dominant peak composed of three transitions associated to excitons bound to residual acceptor impurities. For highly Te-doped layers the excitonic transitions related to exciton bound to neutral acceptor, BE 2, disappears.
The Properties of GaInAsSb/GaSb Heterostructure Grown by Mocvd and P-GaInAsSb/N-GaSb Photodiodes
MRS Proceedings, 1995
ABSTRACTGaInAsSb/GaSb heterostructures have been grown by metalorganic chemical vapor deposition (MOCVD). The optical properties were characterized using low temperature(71K) photoluminescence(PL) and infrared transmission spectroscopy. The FWHM of the typical PL spectrum peaked at 2.3μm is 30meV. Hall measurement results for undoped GaInAsSb layers are presented showing a p-type background and low hole concentration of 6.5 × 1015cm−3. The room temperature performances of the p-GaInAsSb/n-GaSb photodiodes are reported. Its responsivity spectrum is peaked at 2.2 5μm and cuts off at 1.7μm in the short wavelength and at 2.4μm in the long wavelength, respectively. The room temperature detectivity D* is of 1 × 109cm.Hz1/2.W−2
Optical properties of GaSbAlSb heterostructures grown by molecular beam epitaxy
Materials Science and Engineering: B, 1993
In the first part of this paper we discuss the optimization of the growth conditions of molecular beam epitaxy GaSb layers. Then we present preliminary results for GaSb-AlSb multiple quantum wells which have one excitonic absorption line peaking at about 1.5 #m at room temperature. Finally we present a 10 pair Bragg reflector which shows 97% reflectivity. These preliminary results allow the GaSb-AISb system to be considered for optoelectronic devices.