Very high temperature test of InP-based laser diodes (original) (raw)

Estimation of the Reliability and Junction Temperature of the InGaP 650 nm Quantum Well Laser Diode

The reliability of InGaP 650 nm quantum well laser diode has been estimated by measuring the optical output power as a function of time. We have used automated current control (ACC) mode for aging test. Moreover to degrade the laser diode faster and to reduce the experimental period we have approached the accelerated aging. To find out the temperature of the active region, i.e. the junction temperature, the pulsed current-voltage characteristic was carried out at different temperature.

Comprehensive study of reliability of InGaN-based laser diodes

Novel In-Plane Semiconductor Lasers VI, 2007

In this work we present the reliability study of InGaN violet laser diodes fabricated by metaloorganic vapor phase epitaxy on high pressure grown bulk GaN crystals. Our devices were tested both in cw and a pulse regime. We found out that the degradation rate of the laser diodes does not depend on the photon density (at least up to around 50 mW of an output optical power). We show also that the main factor influencing the degradation rate is an operation current density on which the degradation rate depends exponentially.

About the Critical Temperature for Catastrophic Optical Damage in High Power Laser Diodes

Degradation of laser diodes during operation constitutes a serious drawback for both laser manufacturers and end users. The catastrophic optical damage (COD) of laser diodes consists of the sudden drop off of the optical power. COD involves a thermal runaway mechanism in which the active zone of the laser is molten. Degraded devices present dark line defects (DLDs) produced during the laser operation; these DLDs are regions of the active zone of the laser without emission. These dark lines are locally generated, either at the front facet, or inside the cavity, and then propagate along the cavity driven by the optical field. The physical mechanism leading to the formation of such lines and the associated loss of output optical power is described in the literature, but there is not consensus about the origin of the COD. Usually, the COD is described in a sequence of different phases, in the first phase the process is incubated, this phase ends when a critical temperature is reached; t...

Degradation model analysis of laser diodes

Journal of Materials Science: Materials in Electronics, 2008

Broad area laser diodes were subjected to accelerated aging until most devices failed. Cathodoluminescence images indicate dark spots after gradual degradation and dark lines after sudden failure. The aging curves were analyzed based on recombination enhanced defect generation and the Eyring model. The data were statistically evaluated by log-normal distribution of failure time and by nonlinear mixed-effects of degradation parameters. The reliability is estimated for long term device operation.

ESD induced degradation mechanisms of InGaAsP/InP lasers

Quality and Reliability Engineering, 1992

The sensitivity of InGaAsP/InP buried crescent lasers to ESD phenomena was deeply analysed, starting from the need to explain and prevent sudden failures during equipment manufacturing and test. Failure analysis allowed us to localize the degradation, which can be explained by means of a simple phenomenological model; finally a physical model was implemented trying to correlate the results of the failure analysis with the proposed failure mechanism.

Low Temperature Behaviour of Laser Diodes

Le Journal de Physique IV, 1996

Low temperature behaviour of InGaAsP laser diode is studied. The laser is a Fabry-Pirot type with a Buried Heterostxucture. A large improvement of threshold current is obtained as the temperature decreases. The exponential variation of Ith is verified and a TO value of 69K is deduced. The intrinsic resonant frequency is measured with noise analysis. This resonance varies as the square root of the net injected current. The slopes of these curves are found to increase dramatically with decreasing temperature. The 3 dB bandwidth experiments are also performed, leading in the same way, to a large increase of the slopes with cooling but package parasitics limit the maximum achievable bandwidth. The influence of the laser parasitics, such as the roll-off phenomenum, is also underlined.

Automated Lifetime Measurement Facility for Laser Diodes

Lifetime measurement is an important phase for the study of device degradation as well as reliability testing during the fabrication process of laser diodes. We have developed an automated lifetime measurement facility for testing of laser diodes using virtual instrumentation approach. InGaP quantum well laser diodes operating at 650 nm have been used for the optimization of setup. We report here the preliminary results of lifetime measurement of the laser diodes in automatic current control mode at room temperature.

Reliability screening of diode lasers by multispectral infrared imaging

Journal of Applied Physics, 2006

Multispectral infrared ͑IR͒ imaging is used for reliability screening of diode lasers. The signal detected by the camera in the near IR region is found to be mainly affected by midgap deep level luminescence, whereas the thermal radiation is the main signal contribution in the mid IR. The information from both spectral channels is used for preselection of potentially long-lived devices. The devices with enhanced luminescence from deep levels and elevated temperature of the active region are the candidates for faster degradation. Defects such as hot spots can be discarded extremely quickly by using thermographic inspection. The thermographic results are complemented with spectral Fourier transform photocurrent measurements and low-current I-V characterization. The results of aging experiments of diode lasers are presented. A correlation between measurements of unaged devices and lifetest results is found and discussed in detail. The proposed preselection methodology is an alternative to conventional burn-in tests for high-power diode lasers.

Defect Diffusion Model of InGaAs/InP Semiconductor Laser Degradation

To enable high-performance fiber to the x (FTTx) and datacenter networks, it is important to achieve reliable and stable optical components over time. Laser diode is the essential building block of the optical components. Degradation analysis is critical for overall successful reliability design. In this paper, we study the modelling and experimental data of the InGaAs/InP laser degradation. We present a defect diffusion model that involves three propagation media (p-InGaAs contact, p-InP cladding and multi-quantum wells). We propose a simple constitutive equation based on the Gauss error function to describe the defect propagation. The physical model assumes that the p-InGaAs is the rate-limiting factor for the defect diffusion process.

High reliability level on single-mode 980nm-1060 nm diode lasers for telecommunication and industrial applications

High-Power Diode Laser Technology and Applications VI, 2008

We demonstrate very high reliability level on 980-1060nm high-power single-mode lasers through multi-cell tests. First, we show how our chip design and technology enables high reliability levels. Then, we aged 758 devices during 9500 hours among 6 cells with high current (0.8A-1.2A) and high submount temperature (65°C-105°C) for the reliability demonstration. Sudden catastrophic failure is the main degradation mechanism observed. A statistical failure rate model gives an Arrhenius thermal activation energy of 0.51eV and a power law forward current acceleration factor of 5.9. For high-power submarine applications (360mW pump module output optical power), this model exhibits a failure rate as low as 9 FIT at 13°C, while ultra-high power terrestrial modules (600mW) lie below 220 FIT at 25°C. Wear-out phenomena is observed only for very high current level without any reliability impact under 1.1A. For the 1060nm chip, step-stress tests were performed and a set of devices were aged during more than 2000 hours in different stress conditions. First results are in accordance with 980nm product with more than 100khours estimated MTTF. These reliability and performance features of 980-1060nm laser diodes will make high-power single-mode emitters the best choice for a number of telecommunication and industrial applications in the next few years.