A fast preparation technique for high-quality plan view and cross-section TEM specimens of semiconducting materials (original) (raw)
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Simple Plan View Specimen Preparation Technique For Tem Investigation Of Semiconductors and Metals
MRS Proceedings, 1987
This paper discusses a rapid and simple specimen preparation technique which was originally developed for plan view TEM investigation of processed silicon, but which afterwards was modified for the study of GaAs, Al/A1 2 0 3 and Silicon-On-Insulator (SOI) structures. The major advantage of this poor man's method is that no specialised nor expensive equipment is needed.
MRS Proceedings, 1990
In this paper we present a rapid and highly precise plan view and cross-section specimen preparation technique for the localized thinning of semiconductor devices for TEM investigation. No special equipment except the commercially available one is required. Crosssection preparation takes about 6 hours, while plan view takes about 4 hours. Prespecified areas of 0.6 gtm wide and 10 jtm long can easily be thinned with transparency for CTEM and HREM. Using an iterative ion milling procedure allows to scan a complete device in HREM.
TEM cross-section preparation with minimal ion milling time
Journal of Microscopy, 1996
The production of high quality thin film TEM cross-sections suitable for microanalysis is often a difficult and timeconsuming task. This is particularly so in cases where there exists a large difference between the sputtering rate of the film and that of the substrate. The problem is further exacerbated when the levels of internal stress in the film are high enough to cause the substrate to distort during the thinning process. This paper describes some modifications to existing techniques which allow a greater degree of mechanical thinning prior to the ion etching stage. Consequently, ion milling times are drastically reduced, typically by a factor of at least 5 and by as much as 25 in some cases.
Advanced preparation of plan-view specimens on a MEMS chip for in situ TEM heating experiments
MRS Bulletin, 2022
In situ transmission electron microscopy (TEM) is a powerful tool for advanced material characterization. It allows real-time observation of structural evolution at the atomic level while applying different stimuli such as heat. However, the validity of analysis strongly depends on the quality of the specimen, which has to be prepared by thinning the bulk material to electron transparency while maintaining the pristine properties. To address this challenge, a novel method of TEM samples preparation in plan-view geometry was elaborated based on the combination of the wedge polishing technique and an enhanced focused ion beam (FIB) workflow. It involves primary mechanical thinning of a broad sample area from the backside followed by FIB-assisted installation on the MEMS-based sample carrier. The complete step-by-step guide is provided, and the method’s concept is discussed in detail making it easy to follow and adapt for diverse equipment. The presented approach opens the world of in ...
Optimized Ar+-ion milling procedure for TEM cross-section sample preparation
Ultramicroscopy, 2011
High-quality samples are indispensable for every reliable transmission electron microscopy (TEM) investigation. In order to predict optimized parameters for the final Ar þ -ion milling preparation step, topographical changes of symmetrical cross-section samples by the sputtering process were modeled by two-dimensional Monte-Carlo simulations. Due to its well-known sputtering yield of Ar þ -ions and its easiness in mechanical preparation Si was used as model system. The simulations are based on a modified parameterized description of the sputtering yield of Ar þ -ions on Si summarized from literature.
Wedge Cleaving and Ultramicrotomy as Alternative TEM Sample Preparation Methods in Materials Science
MRS Proceedings, 1990
ABSTRACTThe use of two methods for preparation of TEM samples has been investigated. It has been possible to show the practical details of the wedge cleaving method and illustrate it with original results on III-V semiconductors and on metallic thin layers on Silicon. Chemical etching of AlGaAs in heterostructures was clearly observed and can further be quantified. Preferred oxidation of AlAs was shown to be important this can be a problem to a faithful interpretation of images from cross section samples prepared in more conventional ways. Efficient microtomy for use in materials science is still in the development stage, however we think to have found the best conditions for sectioning very soft metals like copper. We hope to decrease the compression in these materials by using lower angle diamond knives
Modified preparation technique of TEM sample for various TEM analyses of structural materials
Materials Letters, 2012
A modified preparation technique is suggested for fabrication of an experimental TEM sample of structural material. A semicircular titanium grid with a diameter of 3 mm was fabricated instead of a commercial TEM grid for various TEM analyses. Both edges of a prefabricated TEM lamella were strongly welded on a rectangular hole at thin edge of the grid to prevent significant bending during additional ion milling. The samples prepared by the modified preparation technique can be used for obtaining of clear TEM images of precipitates and microstructural defects and for observing of the interaction behaviors between defects and dislocation during an in-situ straining TEM examination.