A fast preparation technique for high-quality plan view and cross-section TEM specimens of semiconducting materials (original) (raw)
Simple Plan View Specimen Preparation Technique For Tem Investigation Of Semiconductors and Metals
MRS Proceedings, 1987
This paper discusses a rapid and simple specimen preparation technique which was originally developed for plan view TEM investigation of processed silicon, but which afterwards was modified for the study of GaAs, Al/A1 2 0 3 and Silicon-On-Insulator (SOI) structures. The major advantage of this poor man's method is that no specialised nor expensive equipment is needed.
A new preparation method for cross-sectional TEM specimens
Materials Characterization, 1996
This article presents a new and more time-saving method for the preparation of cross-sectional TEM specimens from coated materials. The preparation procedure includes prepreparation, mounting, embedding, mechanical thinning, and ion-beam thinning. Some special techniques used are also discussed. The main features of the method are as follows: (a) The sample was sandwiched between silicon sheets and then cast in a 3-mm-diameter brass tube with epoxy. The mounted specimen was cured, and then thin slices were cut from the tube. (b) The slice was reinforced on one side with a thin slit disc of beryllium-copper alloy. (c) The assembly was ground, prethinned, and then ion-beam thinned to perforation. This technique has been applied to prepare various interfaces. The specimens prepared by this technique were investigated by TEM, and the results are presented to illustrate the performance of this technique.
MRS Proceedings, 1990
In this paper we present a rapid and highly precise plan view and cross-section specimen preparation technique for the localized thinning of semiconductor devices for TEM investigation. No special equipment except the commercially available one is required. Crosssection preparation takes about 6 hours, while plan view takes about 4 hours. Prespecified areas of 0.6 gtm wide and 10 jtm long can easily be thinned with transparency for CTEM and HREM. Using an iterative ion milling procedure allows to scan a complete device in HREM.
High-Quality Sample Preparation by Low kV FIB Thinning for Analytical TEM Measurements
Microscopy and Microanalysis, 2007
Focused ion beam specimen preparation has been used for NiTi samples and SrTiO 3 /SrRuO 3 multilayers with prevention of surface amorphization and Ga implantation by a 2-kV cleaning procedure. Transmission electron microscopy techniques show that the samples are of high quality with a controlled thickness over large scales. Furthermore, preferential thinning effects in multicompounds are avoided, which is important when analytical transmission electron microscopy measurements need to be interpreted in a quantitative manner. The results are compared to similar measurements acquired for samples obtained using conventional preparation techniques such as electropolishing for alloys and ion milling for oxides.
Optimized Ar+-ion milling procedure for TEM cross-section sample preparation
Ultramicroscopy, 2011
High-quality samples are indispensable for every reliable transmission electron microscopy (TEM) investigation. In order to predict optimized parameters for the final Ar þ -ion milling preparation step, topographical changes of symmetrical cross-section samples by the sputtering process were modeled by two-dimensional Monte-Carlo simulations. Due to its well-known sputtering yield of Ar þ -ions and its easiness in mechanical preparation Si was used as model system. The simulations are based on a modified parameterized description of the sputtering yield of Ar þ -ions on Si summarized from literature.
FIB Plan and Side View Cross-Sectional TEM Sample Preparation of Nanostructures
Microscopy and Microanalysis, 2014
Focused ion beam is a powerful method for cross-sectional transmission electron microscope sample preparation due to being site specific and not limited to certain materials. It has, however, been difficult to apply to many nanostructured materials as they are prone to damage due to extending from the surface. Here we show methods for focused ion beam sample preparation for transmission electron microscopy analysis of such materials, demonstrated on GaAs-GaInP core shell nanowires. We use polymer resin as support and protection and are able to produce cross-sections both perpendicular to and parallel with the substrate surface with minimal damage. Consequently, nanowires grown perpendicular to the substrates could be imaged both in plan and side view, including the nanowire-substrate interface in the latter case. Using the methods presented here we could analyze the faceting and homogeneity of hundreds of adjacent nanowires in a single lamella.
Metallurgical applications of the 21/2D TEM technique
Metallurgical Transactions A, 1981
A simple description is given of the 2 ~D technique of transmission electron microscopy. This method, first introduced by Bell, ~ involves taking a pair of dark field images, at different objective focus settings, using a number of diffracted beams. When observing the pair in a stereo viewer, the diffracting regions are rendered at different levels of height according to the position of their diffraction spots in reciprocal space. A standard procedure is outlined whereby this effect may be exploited for unequivocal association of a feature with its appropriate reflection. This capability is extremely useful for characterizing complex microstructures. Examples of its application are given for a variety of alloys, namely cobalt thin films, laser glazed zircalloy, nitinol, a martensitic low-carbon steel, and partially ordered Ni4Mo. The benefits of this relatively new TEM approach are discussed, particularly from a metallurgical point-of-view.
Microscopy and Microanalysis, 2013
Tomography is a standard and invaluable technique that covers a large range of length scales. It gives access to the inner morphology of specimens and to the three-dimensional (3D) distribution of physical quantities such as elemental composition, crystalline phases, oxidation state, or strain. These data are necessary to determine the effective properties of investigated heterogeneous media. However, each tomographic technique relies on severe sampling conditions and physical principles that require the sample to be adequately shaped. For that purpose, a wide range of sample preparation techniques is used, including mechanical machining, polishing, sawing, ion milling, or chemical techniques. Here, we focus on the basics of tomography that justify such advanced sample preparation, before reviewing and illustrating the main techniques. Performances and limits are highlighted, and we identify the best preparation technique for a particular tomographic scale and application. The targe...