Electrical properties of selectively deposited tungsten thin films (original) (raw)

Applied Physics Letters, 1984

Abstract

Tungsten thin films were selectively deposited onto silicon surfaces by a low pressure chemical vapor deposition process utilizing, sequentially, silicon reduction and then hydrogen reduction of WF6. Surface selectivity and conformal coverage of microelectronic structures is demonstrated. X-ray diffraction and Auger analysis indicate the films are well crystallized, with the possibility of a fraction of a percent oxygen content. The room-temperature resistivity is ∼18 μΩ cm, composed of residual and intrinsic contributions of 12 and 6 μΩ cm, respectively. The Hall effect indicates the material is predominantly a hole conductor, with a relatively low Hall mobility that is consistent with the large residual resistivity. Difficulties with a simple interpretation of the Hall effect are discussed.

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