Formation of CN− radicals by ion implantation (original) (raw)

Nuclear Instruments and Methods in Physics Research, 1982

Abstract

Abstract Sequential implantation of C + and N + ions into KCl is shown to result in formation of CN − radicals. Detection of the CN − is by the characteristic optical emission of that molecule when the implanted crystal is bombarded by He + . The quantity of CN − formed has been studied as a function of energy of the implanted species (20 to 200 keV) and as a function of dose. The results are consistent with a model where an incoming ion A, slowed to rest, causes a localized melting region of volume ΔV and if a previously implanted species B is already present in this volume then the molecule AB is formed by recombination. The molecule adopts a cation lattice site after recrystallization. The localized melting volume corresponds to a region of radius 9.3 A which is roughly consistent with unpublished molecular dynamics calculations.

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