Sublattice orientation dilemma: A reflection high-energy electron diffraction and x-ray photoelectron diffraction study of GaAs growth on vicinal Si(001) surfaces (original) (raw)

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1992

Abstract

It is shown by reflection high-energy electron diffraction that the temperature at which As and Si interact is a key factor in surface reconstruction: at low (TS = 400 °C) and high (TS= 600–700 °C) substrate temperature, and at As4 pressure ∼ 10−5 Torr, the dangling bonds of arsenic are, respectively, perpendicular or parallel to the step edges of the vicinal surface. Photoelectron diffraction shows that, from the very first steps of GaAs molecular-beam epitaxial growth on such surfaces, the GaAs lattice (i) exhibits two orientations determined by As initial orientation and related by a 90° rotation, (ii) is without antiphase domains within the sensitivity limit of the method.

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