Plasmonically enhanced tunable spectrally selective NIR and SWIR photodetector based on intercalation doped nanopatterned multilayer graphene (original) (raw)
Related papers
Graphene optoelectronics from the visible to the mid-infrared
2015
Since its discovery in 2004, graphene, a one-atom-thick layer of carbon atoms arranged in a hexagonal lattice, has attracted huge interest from the scientific community due to its extraordinary electronic, mechanical, and optical properties. While most of the earliest studies focused on electronic transport, in recent years the fields of graphene photonics and optoelectronics have thriven. The goal of this thesis is to explore the use of graphene for novel optoelectronic devices, adopting different approaches to enhance the electrically tunable graphene-light interaction in a broad spectral range, from the visible to the mid-infrared. This includes investigating the sub-wavelength interaction and energy transfer between a dipole and a graphene sheet, as well as working on efficient photodetection schemes. Indeed graphene high electronic mobility, broadband absorption, flexibility and tunable optoelectronic properties (described in Chapter 1) make it extremely appealing for the devel...
Substrate-Sensitive Mid-infrared Photoresponse in Graphene
ACS Nano, 2014
We report mid-infrared photocurrent spectra of graphene nanoribbon arrays on SiO 2 dielectrics showing dual signatures of the substrate interaction. First, hybrid polaritonic modes of graphene plasmons and dielectric surface polar phonons produce a thermal photocurrent in graphene with spectral features that are tunable by gate voltage, nanoribbon width, and light polarization. Secondly, phonon-polaritons associated with the substrate are excited, which indirectly heat up the graphene leading to a graphene photocurrent with fixed spectral features. Models for other commonly used substrates show that the responsivity of graphene infrared photodetectors can be tailored to specific mid-IR frequency bands by the choice of the substrate.
Surface-Modified Graphene for Mid-Infrared Detection
In this chapter, morphology variation and electronic structure in a surface-modified graphene are demonstrated by both calculation and experimental results. The results indicate that the band structure and morphology of modified graphene sheets are altered because of changing in the type of hybridization of carbon atoms in the graphene sheet. Accordingly, the band gap of graphene can be tuned by surface modification using organic molecules. Then, modified graphene is used for fabrication of infrared detectors. The properties of unmodified graphene photodetectors were also measured so as to compare with modified graphene photodetectors. The results demonstrate that modification of graphene using organic ligands improved the detection parameters such as fast response time, electrical stability and low dark current. Moreover, the sensitivity of photodetectors based on modified graphene was significantly improved.
ACS nano, 2016
Graphene's unique electronic and optical properties have made it an attractive material for developing ultrafast short-wave infrared (SWIR) photodetectors. However, the performance of graphene SWIR photodetectors has been limited by the low optical absorption of graphene, as well as the ultrashort lifetime of photoinduced carriers. Here, we present two mechanisms to overcome these two shortages and demonstrate graphene-based SWIR photodetector with high responsivity and fast photoresponse. Particularly, a vertical built-in field is employed onto the graphene channel for trapping the photo-induced electrons and leaving holes in graphene, which results in the prolonging of photoinduced carrier lifetime. On the other hand, plasmonic effect employed to realize photon trapping and enhance the light absorption of graphene. Thanks to the above two mechanisms, the responsivity of this proposed SWIR photodetector is up to a record of 83 A/W at the wavelength of 1.55 μm with a fast rising...
Tuning of Graphene-Based Optical Devices Operating in the Near-Infrared
Applied Sciences, 2021
Graphene is a material with exceptional optical, electrical and physicochemical properties that can be combined with dielectric waveguides. To date, several optical devices based on graphene have been modeled and fabricated operating in the near-infrared range and showing excellent performance and broad application prospects. This paper covers the main aspects of the optical behaviour of graphene and its exploitation as electrodes in several device configurations. The work compares the reported optical devices focusing on the wavelength tuning, showing how it can vary from a few hundred up to a few thousand picometers in the wavelength range of interest. This work could help and lead the design of tunable optical devices with integrated graphene layers that operate in the NIR.
Graphene as thin film infrared optoelectronic sensor
2009 International Symposium on Optomechatronic Technologies, 2009
We present the conductometric behavior of a single atomic carbon nanostructure (graphene) that could be promising to infrared optoelectronic applications. A graphene nanomanipulation system with focused infrared laser source for optoelectronic property characterizations is implemented. The feasibility of mechanical and electrical probing manipulations on two-dimensional thin film nanostructures is studied. Using this system, we revealed the infrared optoelectronic properties of mono-and multilayer graphene. The obtained optoelectronic parameters are compared to the single-and multi-walled nanotubes. A graphene infrared sensor is prototyped by direct writing of electrodes using gold nanoink fountain-pen method and is analyzed by electrical probing. Results show that graphene could be a promising building block for thin film optoelectronic devices.
Voltage-tunable terahertz and infrared photodetectors based on double-graphene-layer structures
We propose and substantiate the concept of terahertz and infrared photodetectors using the resonant radiative transitions between graphene layers (GLs) in double-GL structures. The absorption spectrum and the spectral characteristics of the photodetector responsivity exhibit sharp resonant maxima at the photon energies in a wide range. The resonant maxima can be tuned by the applied voltage. We compare the photodetector responsivity with that of the GL p-i-n photodiodes and quantum-well infrared photodetectors. Weak temperature dependences of the photocurrent and dark current enable the effective operation of the proposed photodetector at room temperature.
Graphene gold nanoparticle hybrid based near infrared photodetector
2017
This paper presents novel and simplistic approach towards the development of graphene based near infrared (NIR) photodetectors. The developed device comprises of Au nanoparticles integrated within the channel of the back-gated graphene field effect transistors. The introduction of Au nanoparticles enhanced response of the device under IR illumination due improved NIR absorption. Further, dynamic response of the device under IR illumination is presented. This study will trigger the development of novel hybrid graphene device for graphene based photodetectors in IR regime.
Modification of graphene oxide for applying as mid-infrared photodetector
Applied Physics B, 2015
Research on graphene is a fast developing field, with new concepts and applications appearing at an incredible rate. Graphene-based materials are of interest because of the excellent mechanical and electrical properties that the graphene sheet has [1-3]. Graphene has not only unusual properties regarding extreme mechanical strength, thermal conductivity and 2-dimensional films, but also peculiar electronic characteristics such as Dirac-particles with a linear dispersion, transport energy gap and simply absorption coefficient of lights [1]. Graphene is a single sheet of carbon atoms arranged in the well-known honeycomb structure . Electrons in graphene show relativistic behavior, and the system is therefore an ideal candidate for the test of quantum-field theoretical models, and most prominently, electrons in graphene may be viewed as massless charged fermions living in 2D space, particles one usually does not encounter in our three-dimensional world . Indeed, all massless elementary particles happen to be electrically neutral, such as photons or neutrinos . Graphene has a zero band gap absorbing electromagnetic radiation from ultraviolet to terahertz on account of the interband transition [7], so it can be used in photonic and electronic devices. The high nonlinear susceptibility of graphene can also potentially enable high-efficiency optical frequency conversion (e.g., four wave mixing [8], harmonic generation [9, 10] and nonlinear refraction ). Despite intense interest and remarkably rapid progress in the field of graphene-related research, there is still a long way to go for the widespread implementation of graphene. It is primarily due to the difficulty in reliably producing high-quality samples, and in controllably tuning the band gap of graphene. For instance, while graphene can conduct electrons faster than other materials, there is no way to Abstract A novel and simple route to create a band gap in graphene through band structure engineering in homogeneous aqueous suspension of chemically synthesized graphene is reported that when fabricated as MID IR detector shows some improved detection parameters. The method for preparing graphene involves sequential chemical synthesis of graphene oxide (GO) suspended in water and then reducing it with hydrazine monohydrate. Adjusting the degree of hydrazine added through reduction process of GO dictates the electronic structure and morphology variation in graphene sheets that has been presented from experimental results in this paper. The obtained samples were studied by FTIR, XRD, AFM and SEM methods. Here, high-dosehydrazine-reduced graphene oxide (RGO10) is used as metal-graphene-metal MID IR detector, and the results are compared with hydrazine-reduced GO (RGO)-based detector. Results showed that the obtained RGO10-based detector exhibited higher sensitivity and photo-responsivity. The temporal response for this detector is 35 ms rise time. The excellent fast detection and high electrical stability of RGO10 as active material of MID IR detector were attributed to single-step reduction and modification of graphene.