Si-based GeSn lasers with wavelength coverage of 2 to 3 {\mu}m and operating temperatures up to 180 K (original) (raw)

Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K

Sattar Al-kabi

ACS Photonics, 2017

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Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 223%

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Lasing in direct-bandgap GeSn alloy grown on Si

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Direct Bandgap GeSn Alloys for Laser Application

Detlev Grützmacher

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An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

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Detlev Grützmacher

Chemistry of Materials, 2015

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Boris Vulovic

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Electrically injected GeSn lasers with peak wavelength up to 2.7 μm

Joshua Grant

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Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

Amjad Nazzal, Larry Cousar

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Electrically injected GeSn lasers with peak wavelength up to 2.7 micrometer at 90 K

Sylvester Amoah

arXiv: Applied Physics, 2020

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Electrically injected GeSn lasers on Si operating up to 100 K

Sylvester Amoah

2020

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Jurgen Michel

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Optical gain and lasing from band-engineered Ge-on-Si at room temperature

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Investigation of Critical Technologies of Chemical Vapor Deposition for Advanced (Si)GeSn Materials

Joshua Grant

Masters Thesis, 2019

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Stefano Chiussi

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014

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Hameed Naseem

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Jurgen Michel

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Characterization of GeSn for Si-based Optoelectronic Devices

Hameed Naseem

2013

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Supplementary document for Electrically injected GeSn lasers on Si operating up to 100 K - 4702364.pdf

Sylvester Amoah

2020

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GeSn on Insulators (GeSnOI) Toward Mid-infrared Integrated Photonics

Lisa Je

Frontiers in Physics, 2019

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