Failure mechanisms of GaAs mesfets with Cu/refractory metallized gates (original) (raw)

Failure mechanisms of GaAs mesfets with Cu/refractory metallized gates

Microelectronics Reliability, 1997

Abstract

The DC performance of Cu-based GaAs MESFETs with Au/Cu/Ti and Cu/TiW metallized gates has been characterized after accelerated stress testing up to 250°C and anneals of 1000 hours. A failure mode has been shown to result in a decrease in I DSS , g m and V P and ...

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