Fabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition (original) (raw)

Focused Ion Beam Induced Nanojunction and Defect Doping as a Building Block for Nanoscale Electronics in GaN Nanowires

W. Tu, L-ch Chen, S. Dhara

The Journal of Physical Chemistry C, 2010

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Kris Bertness

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Kris Bertness

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Ilan Shalish

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Steven Denbaars

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Sverre Vegard Pettersen

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Fabien Bayle

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Parijat Kumar Deb

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Nano-dot addition effect on the electrical properties of Ni contacts to p-type GaN

june song

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Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

Ph. Komninou, Albert Davydov, Leonardo Lari, George Dimitrakopulos

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Reassembling of Ni and Pt catalyst in the vapor–liquid–solid growth of GaN nanowires

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Nanoharvesting of GaN nanowires on Si (211) substrates by plasma-assisted molecular beam epitaxy

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GaN Nanowires Grown by Molecular Beam Epitaxy

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Electrical characterization of single GaN nanowires

David Routenberg

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High-Reflectivity A1-Pt Nanostructured Ohmic Contact to p-GaN

Timothy Sands

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Direct Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide-Coated Silica

Ram Subedi

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Effects of experimental parameters on the growth of GaN nanowires on Ti-film/Si(1 0 0) and Ti-foil by molecular beam epitaxy

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Kris Bertness

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Eunsoon Oh

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