Transport properties through graphene grain boundaries: strain effects versus lattice symmetry (original) (raw)
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Conduction gap in graphene strain junctions: direction dependence
Semiconductor Science and Technology, 2014
It has been shown in a recent study [Nguyen et al., Nanotechnol. 25, 165201 (2014)] that unstrained/strained graphene junctions are promising candidates to improve the performance of graphene transistors that is usually hindered by the gapless nature of graphene. Although the energy bandgap of strained graphene still remains zero, the shift of Dirac points in the k -space due to strain-induced deformation of graphene lattice can lead to the appearance of a finite conduction gap of several hundreds meV in strained junctions with a strain of only a few percent. However, since it depends essentially on the magnitude of Dirac point shift, this conduction gap strongly depends on the direction of applied strain and the transport direction. In this work, a systematic study of conduction gap properties with respect to these quantities is presented and the results are carefully analyzed. Our study provides useful information for further investigations to exploit graphene strained junctions in electronic applications.
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We propose a route to all-graphene integrated electronic devices by exploring the influence of strain on the electronic structure of graphene. We show that strain can be easily tailored to generate electron beam collimation, 1D channels, surface states and confinement, the basic elements for allgraphene electronics. In addition this proposal has the advantage that patterning can be made on substrates rather than on the graphene sheet, thereby protecting the integrity of the latter. PACS numbers: 81.05.Uw,85.30.Mn,73.90.+f 1 arXiv:0810.4539v3 [cond-mat.mes-hall]
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Deformations in graphene systems are central elements in the novel field of straintronics. Various strain geometries have been proposed to produce specific properties but their experimental realization has been limited. Because strained folds can be engineered on graphene samples on appropriate substrates, we study their effects on graphene transport properties. We show the existence of an enhanced local density of states (LDOS) along the direction of the strained fold that originates from localization of higher energy states, and provides extra conductance channels at lower energies. In addition to exhibit sublattice symmetry breaking, these states are valley polarized, with quasi-ballistic properties in smooth disorder potentials. We confirmed that these results persist in the presence of strong edge disorder, making these geometries viable electronic waveguides. These findings could be tested in properly engineered experimental settings.
Electronic transport across extended grain boundaries in graphene
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Owing to its superlative carrier mobility and atomic thinness, graphene exhibits great promise for interconnects in future nanoelectronic integrated circuits. Chemical vapor deposition (CVD), the most popular method for wafer-scale growth of graphene, produces monolayers that are polycrystalline, where misoriented grains are separated by extended grain boundaries (GBs). Theoretical models of GB resistivity focused on small sections of an extended GB, assuming it to be a straight line, and predicted a strong dependence of resistivity on misorientation angle. In contrast, measurements produced values in a much narrower range and without a pronounced angle dependence. Here we study electron transport across rough GBs, which are composed of short straight segments connected together into an extended GB. We found that, due to the zigzag nature of rough GBs, there always exist a few segments that divide the crystallographic angle between two grains symmetrically and provide a highly conductive path for the current to flow across the GBs. The presence of highly conductive segments produces resistivity between 10 2 to 10 4 Ω μm regardless of misorientation angle. An extended GB with large roughness and small correlation length has small resistivity on the order of 10 3 Ω μm, even for highly mismatched asymmetric GBs. The effective slope of the GB, given by the ratio of roughness and lateral correlation length, is an effective universal quantifier for GB resistivity. Our results demonstrate that the probability of finding conductive segments diminishes in short GBs, which could cause a large variation in the resistivity of narrow ribbons etched from polycrystalline graphene. We also uncover spreading resistance due to the current bending in the grains to flow through the conductive segments of the GB and show that it scales linearly with the grain resistance. Our results will be crucial for designing graphene-based interconnects for future integrated circuits.
Tuning transport properties of graphene three-terminal structures by mechanical deformation
Physical Review B, 2018
Straintronic devices made of carbon-based materials have been pushed up due to the graphene high mechanical flexibility and the possibility of interesting changes in transport properties. Properly designed strained systems have been proposed to allow optimized transport responses that can be explored in experimental realizations. In multi-terminal systems, comparisons between schemes with different geometries are important to characterize the modifications introduced by mechanical deformations, specially if the deformations are localized at a central part of the system or extended in a large region. Then, in the present analysis, we study the strain effects on the transport properties of triangular and hexagonal graphene flakes, with zigzag and armchair edges, connected to three electronic terminals, formed by semi-infinite graphene nanoribbons. Using the Green's function formalism with circular renormalization schemes, and a single band tight-binding approximation, we find that resonant tunneling transport becomes relevant and is more affected by localized deformations in the hexagonal graphene flakes. Moreover, triangular systems with deformation extended to the leads, like longitudinal three-folded type, are shown as an interesting scenario for building nanoscale waveguides for electronic current.
Nanotechnology, 2011
Electronic transport properties of monolayer graphene with extreme physical bending up to 90 o angle are studied using ab Initio first-principle calculations. The importance of key structural parameters including step height, curvature radius and bending angle are discussed how they modify the transport properties of the deformed graphene sheet comparing to the corresponding flat ones. The local density of state reveals that energy state modification caused by the physical bending is highly localized. It is observed that the transport properties of bent graphene with a wide range of geometrical configurations are insensitive to the structural deformation in the low-energy transmission spectra, even in the extreme case of bending. The results support that graphene, with its superb electromechanical robustness, could serve as a viable material platform in a spectrum of applications such as photovoltaics, flexible electronics, OLED, and 3D electronic chips.
Band structure engineering of graphene by strain: First-principles calculations
Physical Review B, 2008
We have investigated the electronic structure of graphene under different planar strain distributions using the first-principles pseudopotential plane-wave method and the tight-binding approach. We found that graphene with a symmetrical strain distribution is always a zero band-gap semiconductor and its pseudogap decreases linearly with the strain strength in the elastic regime. However, asymmetrical strain distributions in graphene result in opening of band gaps at the Fermi level. For the graphene with a strain distribution parallel to CC bonds, its band gap continuously increases to its maximum width of 0.486 eV as the strain increases up to 12.2%. For the graphene with a strain distribution perpendicular to CC bonds, its band gap continuously increases only to its maximum width of 0.170 eV as the strain increases up to 7.3%. The anisotropic nature of graphene is also reflected by different Poisson ratios under large strains in different directions. We found that the Poisson ratio approaches to a constant of 0.1732 under small strains but decreases differently under large strains along different directions.
Achieving a higher performance in bilayer graphene FET - strain engineering
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015
In addition to its high mobility, the possibility of opening sizable bandgaps has made bilayer graphene (BLG) a promising candidate for many electronic and optoelectronic applications. Yet, the achievable bandgap (300 meV) is not sufficient to make BLG a candidate for high performance transistors. Vertical strain in conjunction with the vertical field can help to achieve a larger band gap in BLG. In this paper, p z nearest-neighbor atomistic tight-binding model and Nonequilibrium Green's Function (NEGF) method are used to study the transport behavior of strained BLG transistors under electric field. A field tunable dynamic band gap (DBG) of up to 300 meV is found to exist in BLG with no strain in agreement with previous reports. By applying strain, one can increase the band gap of BLG beyond 300 meV. Finally, the DBG effect and vertical strain are shown to be able to enhance the ON/OFF ratio of a BLG field effect transistor (FET) to 1000.
Transport properties of graphene across strain-induced nonuniform velocity profiles
Physical Review B, 2011
We consider the effect of uniaxial strain on ballistic transport in graphene, across single and multiple tunneling barriers. Specifically, we show that applied strain not only shifts the position of the Dirac points in reciprocal space, but also induces a deformation of the Dirac cones, and that both effects are of the same order on the applied strain intensity. We therefore study the deviations thereby induced on the angular dependence of the tunneling transmission across a single barrier, as well as on the conductivity and Fano factor across a single barrier and a superstructure of several, periodically repeated, such sharp barriers. Our model is generalized to the case of nonuniform barriers, where either the strain or the gate potential profiles may depend continuously on position. This should afford a more accurate description of realistic 'origami' nanodevices based on graphene, where 'foldings' are expected to involve several lattice spacings.
Electronic transport through ordered and disordered graphene grain boundaries
Carbon, 2013
The evolution of electronic wave packets (WPs) through grain boundaries (GBs) of various structures in graphene was investigated by the numerical solution of the time-dependent Schrö dinger equation. WPs were injected from a simulated STM tip placed above one of the grains. Electronic structure of the GBs was calculated by ab-initio and tight-binding methods. Two main factors governing the energy dependence of the transport have been identified: the misorientation angle of the two adjacent graphene grains and the atomic structure of the GB. In case of an ordered GB made of a periodic repetition of pentagonÀheptagon pairs, it was found that the transport at high and low energies is mainly determined by the misorientation angle, but the transport around the Fermi energy is correlated with the electronic structure of the GB. A particular line defect with zero misorientation angle Lahiri et al., behaves as a metallic nanowire and shows electron-hole asymmetry for hot electrons or holes. To generate disordered GBs, found experimentally in CVD graphene samples, a Monte-Carlo-like procedure has been developed. Results show a reduced transport for the disordered GBs, primarily attributed to electronic localized states caused by C atoms with only two covalent bonds.