Studies of the DC, low-frequency, and microwave characteristics of uniform and step-doped GaAs/AlGaAs HEMTs (original) (raw)

Comparison of 80-200 nm gate length Al/sub 0.25/GaAs/GaAs/(GaAs:AlAs), Al/sub 0.3/GaAs/In/sub 0.15/GaAs/GaAs, and In/sub 0.52/AlAs/In/sub 0.65/GaAs/InP HEMTs

Geir Jensen

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Design of High Frequency Single and Double Gate Laterally-Contacted InGaAs/InAlAs HEMTs

Journal of Electrical and Computer Engineering Innovations

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DC and RF characteristics of 20 nm gate length InAlAs/InGaAs/InP HEMTs for high frequency application

International Journal of Electrical and Computer Engineering (IJECE)

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Characteristics of GaAs/AlGaAs HEMT's fabricated by X-ray lithography

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2002

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Fabrication and Characterization of Thin-Barrier {Al}_{0.5}{Ga}_{0.5}{N/AlN/GaN} HEMTs

Martin Fagerlind

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Low noise In/sub 0.32/(AlGa)/sub 0.68/As/In/sub 0.43/Ga/sub 0.57/As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density

T. Kazior

IEEE Electron Device Letters, 2000

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Epitaxial lift-off GaAs HEMT's

divyang patel

IEEE Transactions on Electron Devices, 1995

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Design Optimization of AlInAs–GaInAs HEMTs for Low-Noise Applications

Javier Mateos

IEEE Transactions on Electron Devices, 2004

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Design optimization of AlInAs-GaInAs HEMTs for high-frequency applications

Daniel Pardo

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Design Optimization of AlInAs–GaInAs HEMTs for High-Frequency Applications

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Michael Schlechtweg

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Kartik Chandra Sahoo

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Determination of device structure from GaAs/AlGaAs HEMT DC I-V characteristic curves

David Skellern

IEEE Transactions on Electron Devices, 1992

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Jen-Inn Chyi

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Kei Lau

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Broadband microwave noise characteristics of high-linearity composite-channel Al/sub 0.3/Ga/sub 0.7/N/Al/sub 0.05/Ga/sub 0.95/N/GaN HEMTs

Kei Lau

IEEE Electron Device Letters, 2000

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Pseudomorphic InGaAs HEMTs on GaAs substrates with undoped and doped channels

GEORGE PAPAIOANNOU

Superlattices and Microstructures, 1990

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RF and microwave characteristics of a 20nm gate length InAlN/GaN-based HEMT having a high “Figure of Merit”

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