Two-dimensional imaging of III-V quantum dots confinement potential (original) (raw)
EPL (Europhysics Letters), 2009
Abstract
Composition, doping, size, and strain distribution within quantum dots, and at the dots-substrate interfaces, determine the confinement potential of electrons and holes creating a complex band structure. We use ultra-high vacuum Kelvin probe force microscopy to obtain the two-dimensional confinement potential in and around InAs and InSb dots epitaxially grown on GaAs. It is found that the potential manifests rich
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