Large-Size AlGaN/GaN HEMT Large-Signal Electrothermal Characterization and Modeling for Wireless Digital Communications (original) (raw)
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T his paperpresents a systematic analysis of the two kinds of traps encountered in AlGaN/GaN HEMTs. It is shown that passivation is very efficient to minimize the surface trap effects but has little effect on the buffer traps. Thos eo ne sc an only be eliminated through the development of high purity substrates. Moreover thermal I-V and microwave behaviour of such transmissions is investigated through the use of a pulse-measurement system.
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For AlGaN/GaN high electron mobility transistors (HEMTs), the voltage and current waveforms at CW large-signal operation at 5 GHz have been reconstructed from experimental magnitude and phase information on fundamental and higher harmonics of transmitted and reflected signals. To compare with the DC behaviour, the clipped waveforms have accurately been analysed to recover the dynamic output characteristics in view of dispersion effects related to self-heating. In conjunction with small-signal Sparameter data, the large-signal experimental results have been used in an attempt to apply a HEMT largesignal model, showing satisfactory agreement of simulated and measured characteristics at least in regions where self-heating is not much pronounced.
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In this paper, a simple non-linear analytical charge control model for the DC and microwave characteristics of AlGaN/GaN MODFET is presented. The effect of parasitic resistances s R and d R is also incorporated. The model has also been extended to obtain the expressions for transconductance, drain conductance and cutoff frequency of the device. The model predicts a high transconductance of 502.6mA/mm at 1Vof gate bias and a maximum cutoff frequency of 22.5GHz for a 50nm device gate length, which is important in realizing the device for microwave applications. The extrinsic and intrinsic characteristics show close agreement with the published results proving the validity of the model.