The 1.6-kV AlGaN/GaN HFETs (original) (raw)
2000, IEEE Electron Device Letters
Related papers
2010
Abstract To improve the breakdown characteristics of an AlGaN/GaN based high electron mobility transistor (HEMT) for high voltage applications, AlGaN/GaN/Al x Ga 1− x N double heterostructure (DH-HEMTs) were designed and fabricated by replacing the semi-insulating GaN buffer with content graded Al x Ga 1− x N (x= x 1→ x 2, x 1> x 2), in turn linearly lowering the Al content x from x 1= 90% to x 2= 5% toward the front side GaN channel on a high temperature AlN buffer layer.
Loading Preview
Sorry, preview is currently unavailable. You can download the paper by clicking the button above.