Fabrication of Aluminum Nitride Thermal Substrate and Low-Temperature Die-Bonding Process for High Power LED (original) (raw)
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AlN and Carbon-doped AlN (C-AlN) thin films were grown on metal substrates (Cu and Al) and heat sink by RF coupled DC sputtering. The thermal transient measurement was recorded for the given Light Emitting Diode (LED) attached with AlN and C-AlN thin film coated metal substrates and heat sink at various driving currents. The rise in junction temperature (TJ ) of LED was low for C-AlN (74.11 ◦C) thin film coated Cu substrate than AlN coated Cu (82.40 ◦C) substrate measured at 550mA. The total thermal resistance (Rth-tot ) value (38.94K/W) for C-AlN deposited on Cu was lower than for C-AlN prepared on Al substrate (42.46 K/W). On the other hand, Cu substrate showed good heat transfer properties than Al substrate and heat sink in terms of TJ and Rth-tot . The total Rth of LED was comparatively low for C-AlN boundary condition than for high surface area heat sink. Overall, the observed results suggested the possibility of usage of C-AlN thin film as thermal interface materials for LED applications.
Carbon doped Aluminium Nitride (C-AlN) thin film was synthesized on Al and Cu substrates using RF sputtering and used as heat sink for high power LED. The optical properties of LED such as correlated color temperature (CCT) and brightness (LUX) was recorded by spectrometer and tested for various driving currents. Increased lux level was observed for high driving currents and showed the performance C-AlN thin film as good thermal interface material at high driving currents.The observed CCT values were in between 6180-6900 K and increased for high driving currents. At the lower driving current, CCT value was high for C-AlN on Cu than on Al.overall, the observed optical properties of LED using C-AlN thin film as thermal interface material was suggested to explore the usage of C doped AlN thin film as effective thin film thermal interface material for thermal management in solid state lighting applications.
AlN-AlN Wafer Bonding and Its Thermal Characteristics
ECS Transactions, 2014
Homogeneous bonding was successfully demonstrated on 150 mm Si wafers by face-to-face fusion bonding of two clean and smooth aluminum nitride (AlN) layers. Characterization result from XPS confirms the layer composition and reveals that approximately 5 nm of the layer surface was partially oxidized during processing. The as-bonded wafer pair is nearly void and particle free with a high bonding strength of 1263.0 mJ/m2, enabling it to withstand the subsequent process steps. In addition, the AlN-AlN bonded wafers appear to have the best heat dissipation capability when compared with other bonded wafers, which used SiO2 or Al2O3 as the bonding layer.
Joint structure in high brightness light emitting diode (HB LED) packages
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We present the transmission electron microscopy (TEM) analysis of 1.5μm-thick Au–20Sn solder joint between a high brightness light emitting diode (HB LED) and a Si heat sink. Due to intermetallic compound formation, global Sn depletion occurred in the thin solder, which raised the melting point of the solder and caused local incompleteness of bonding.