Fully Solution-Processed Low-Voltage Driven Transparent Oxide Thin Film Transistors (original) (raw)

High Mobility Thin Film Transistors with Transparent ZnO Channels

Japanese Journal of Applied Physics, 2003

We have fabricated high performance ZnO thin film transistors (TFTs) using CaHfO x buffer layer between ZnO channel and amorphous silicon–nitride gate insulator. The TFT structure, dimensions, and materials set are identical to those of the commercial amorphous silicon (a-Si) TFTs in active matrix liquid crystal display, except for the channel and buffer layers replacing a-Si. The field effect mobility can be as high as 7 cm2·V-1·s-1 for devices with maximum process temperature of 300°C. The process temperature can be reduced to 150°C without much degrading the performance, showing the possibility of the use of polymer substrate.