Synthesis and conductivity mapping of SnS quantum dots for photovoltaic applications (original) (raw)

2013, Materials Science and Engineering: B

Quantum dots (QDs) are considered a possible solution to overcome the Shockley-Queisser efficiency limit of 31% for single junction solar cells by efficiently absorbing above band gap energy photons through Multiple Exciton Generation (MEG) or sub band gap energy photons using an Intermediate Band Solar Cell structure (IBSC). For the latter absorption process, we consider tin sulphide (SnS) as a promising candidate, having several advantages compared to the other nanoparticles studied extensively so far, such as CdS, CdSe, PbS, and PbSe; namely it is non-toxic and environmentally benign and thus will be most suitable in consumer products such as solar panels. In this work we propose a new colloidal synthesis method for SnS QDs. We have obtained monodispersive SnS and SnS/In 2 S 3 core-shell nanoparticles with a size of ∼4 nm. Energy dispersive X-ray spectroscopy (EDX) elemental analysis revealed that the particles are indeed SnS and not SnS 2. Furthermore, the conductive nature of the nanoparticles has been inferred by conductivity mapping using a relatively new contactless technique, Torsional Resonance Tunneling AFM (TR-TUNA). These results confirm that the SnS QDs possess all the requirements to be applied as photoactive layers in photovoltaic devices.

Sign up for access to the world's latest research.

checkGet notified about relevant papers

checkSave papers to use in your research

checkJoin the discussion with peers

checkTrack your impact