original ) (raw )The impact of active layer design on quantum efficiency of InGaN light emitting diodes
Xing Li
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The effects of thin capping layers between quantum wells and barriers on the quantum efficiency enhancement in InGaN-based light emitting diodes
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Impact of active layer design on InGaN radiative recombination coefficient and LED performance
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Impact of ballistic electron transport on efficiency of InGaN based LEDs
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Effect of Electron Leakage on Efficiency Droop in Wide-Well InGaN-Based Light-Emitting Diodes
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Ballistic transport in InGaN-based LEDs: impact on efficiency
Xing Li
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Electroluminescence efficiency of (1\,0\,\bar{1}\,0) -oriented InGaN-based light-emitting diodes at low temperature
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The effect of ballistic and quasi‐ballistic electrons on the efficiency droop of InGaN light emitting diodes
Xing Li
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Achieving Uniform Carriers Distribution in MBE Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs
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Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions
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InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes
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Effect of InGaN thickness on assisted trap recombination and behaviour of InGaN/AlGaN double heterostructure LED
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Radiative Recombination Efficiency of InGaN-Based Light-Emitting Diodes Evaluated at Various Temperatures and Injection Currents
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Japanese Journal of Applied Physics, 2007
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Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells
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Japanese Journal of Applied Physics, 2013
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Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier
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Applied Physics Letters, 2011
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First all-HVPE grown InGaN/InGaN MQW LED structures for 460-510 nm
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Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs
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physica status solidi (c), 2016
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Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them
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High Power and High External Efficiency m -Plane InGaN Light Emitting Diodes
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Japanese Journal of Applied Physics, 2007
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Effect of InGaN quantum dot size on the recombination process in light-emitting diodes
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Applied Physics Letters, 2008
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Study of the Excitation Power Dependent Internal Quantum Efficiency in InGaN/GaN LEDs Grown on Patterned Sapphire Substrate
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IEEE Journal of Selected Topics in Quantum Electronics, 2009
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Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes
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