Design and simulation of low actuation voltage perforated RF MEMS Switch (original) (raw)
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Comprative Study of Perforated RF MEMS Switch
MEMS are the Micro Electronic mechanical system or in general terms it is also known as Micro electronic mechanical switch. MEMS have classified in two types of switch that is series switch and shunt switch .The cantilever is a series type switch whereasthe fixed- fixed beam is shunt type switch. Fixed- Fixedbeam is the element that is fixed at both anchor ends. The electrostatic actuation process occurs on the switch due to which switch deflects from its original position. The stiction problem occurs in MEMS switches which have been reduced by the proposed design.The perforation is used to reduce the squeeze film damping by decreasing the mass of the switch.Asthe voltage increases the switch moves to downward z-direction.The displacement is produce d in the switch as direction of movement is towardsnegative z-axis. When the beam contacts with electrode,pull in voltage is achieved. This paper explores the perforation and meanderconcept with Fixed - fixed switch, which increases the flexibility, low actuation voltageand switching speed. The various types of perforations provide discrete displacement corresponding to voltage. In this paper we represent the design and simulation of Fixed-Fixed switch using perforation of size 2μm-5μm. The electrostatic actuation mechanism is applied on the Fixed -fixed switch which has a serpentine meanders and perforation at different voltages. The switch is designed and simulated by using COMSOL®MULTIPHYSICS 4.3b software
Comparative Study of Perforated RF MEMS Switch
Procedia Computer Science, 2015
MEMS are the Micro Electronic mechanical system or in general terms it is also known as Micro electronic mechanical switch. MEMS have classified in two types of switch that is series switch and shunt switch .The cantilever is a series type switch whereas the fixed-fixed beam is shunt type switch. Fixed-Fixed beam is the element that is fixed at both anchor ends. The electrostatic actuation process occurs on the switch due to which switch deflects from its original position. The stiction problem occurs in MEMS switches which have been reduced by the proposed design. The perforation is used to reduce the squeeze film damping by decreasing the mass of the switch. As the voltage increases the switch moves to downward z-direction .The displacement is produced in the switch as direction of movement is towards negative z-axis. When the beam contacts with electrode, pull in voltage is achieved. This paper explores the perforation and meander concept with Fixed-fixed switch, which increases the flexibility, low actuation voltage and switching speed. The various types of perforations provide discrete displacement corresponding to voltage. In this paper we represent the design and simulation of Fixed-Fixed switch using perforation of size 2μm-5μm. The electrostatic actuation mechanism is applied on the Fixed-fixed switch which has a serpentine meanders and perforation at different voltages. The switch is designed and simulated by using COMSOL ® MULTIPHYSICS 4.3b software.
Design and simulation of Various Fixed -Fixed RF MEMS Switch
Thepaper represents the various design Fixed- fixed RF MEMS switch .The comparative analysis of RF MEMS switch of z-component displacement, pull in voltage and capacitance. The switch used high dielectric constant material hafnium oxide .TheCOMSOL®MULTIPHYSICS 4.3b software is used to design and simulated the switch. The switch is design to decreases the power consumption and linearity .In this paper the proposed switch is reduced the actuation voltage. The low voltage switches are essential due to their compatibility of benchmark IC technology in RF application and microelectronics systems. In realizing MEMS switches with low actuation voltage, spring constant of beam must be reduced.
Design, Simulation and Analysis of MEMS Perforated RF Switch with Platinum
A new model of RF switch was designed using MEMS technology with a cantilever structure which is giving high sensitivity. The materials having low spring constant have been taken and will be examined in COMSOL by identifying the relation between Eigen frequency and displacement.The Proposed structure will be examined with different materials with different thickness(2µm,2.2µm,2.4µm,2.6µm,2.8µm,3µm).The maximum displacementand the minimum displacement for a Eigen frequency will be taken for the platinum materialwithanexamined beam thickness for which highest displacement occurs.
DESIGN OF NON-UNIFORM SHAPED RF MEMS SWITCH
TJPRC, 2013
In this paper, we present aNovel Non-uniform shapedcantilever based DC contact RF MEMS switch. This switch can be employedfor various microwave applications in frequency range of DC-10GHz as it shows excellent RF characteristics. The design is optimized in the terms of electrostatic actuation mechanism, which included switch beam thickness, beam gap and materials. Also the due to its optimized shape and size of contact geometry and material ensures the high reliability, high isolation and very low insertion loss. The main features of our switch aresimplicity of structure, reliability of contact, excellent RF characteristics, low actuation voltage and excellent figure of merit. The pull-in voltage, contact force and S-parameters are analyzed with software such as Coventorware. Various Switching parameters areanalyzed for the performance of the switch in terms of switching speed and power consumption. The paper briefly outlines the Design of RF MEMS switches and also focuses on the research efforts that have gone into maturing the technology.
Comparative Study of Cantilever RF MEMS Switch
Materials Today: Proceedings, 2017
In a MEMS based RF switch Cantilever beam is an element that is fixed at one end and free from another side. The electrostatic actuation process occurs on the beam and it will deflect from an original position. As the Electrostatic force increases, the zcomponent displacement produced in the beam is also increases. The beam is placed at the 2µm height from the ground substrate. The cantilever works as a switch which operates as ON or OFF. When the switch is ON its capacitance increases and when it is OFF its capacitance decreases. When applied actuation voltage reaches to Pull-in-voltage the cantilever connects with the ground electrode. This paper explores the concept of increase in flexibility, switching speed, low power consumption, low actuation voltage and reduction in squeeze film damping. The various types of cantilever switch provide discrete displacement corresponding to actuation voltage. In this paper we simulated the cantilever switch with various shapes. The simulation is done using COMSOL MULTIPHYSICS software.
Design and Analysis of a Non-Uniform Meander RF MEMS Switch
2021
This paper aimed to design and analysis of non-uniform meander capacitive shunt RF MEMS switch. The less pull in voltage is obtained in flexure type membrane by proposed RF MEMS Switch. The selection of materials for the beam and dielectric layer is expressed in this paper and also shown the performance depends on materials utilized for the design. The high isolation of -31.15dB actuating at the pull-in voltage of 7.69V with a spring constant of 3.28N/m produced the switch and is obtained by the optimization process. Capacitive contact switches have capability of power handling. The actuated switch state provides an excellent isolation. It shorts the ground by RF signal. MEMS technology is the integration of electrical and mechanical components on single platform i.e. substrate [10]. From the literature, various researchers have proposed different RF MEMS Switch, but still there few challenges on optimization of the Switch for best performance. The electromechanical analysis such as...
A Novel Design of Cantilever RF MEMS Series Switch
This paper presents novel design of various configurations of cantilever type Radio Frequency Micro Electro Mechanical Systems (RF MEMS) Series Switch. The paper emphasizes on study of Actuation Voltage of RF MEMS switches. Actuation voltages of uniform cantilever switches has been compared with cantilever switches supported on three bars (non-uniform switch) for various geometric configuration and material properties. It is observed from the simulation results that reduction in actuation voltage as high as 5V can be achieved by reducing the anchorage width. Also, use of mica with higher dielectric constant over silicon nitride as dielectric layer yields considerable reduction in actuation voltage.
Design, Modeling and Analysis of Perforated RF MEMS Capacitive Shunt Switch
IEEE Access
This paper illustrates the design, modeling, and analysis of bridge type structure based capacitive RF MEMS switch with different beam thickness and materials. We have used Ashby's approach to select the best materials in each and every level which helped to improve the overall performance of the switch in terms of mechanical, electrical and RF properties. Silicon Nitride thin film (ε r = 7.8) is used as a dielectric material. The beam structure stiffness is analyzed with different materials such as gold, titanium, and platinum, with in these materials gold with high thermal conductivity and Euler-young"s modulus of 77 GPa is offering the best performance. Incorporation of meanders and perforations to the membrane helped to reduce the pull-in voltage. The proposed switch is offering very low pull-in voltage of 1.9 V. The deflection of beam thickness is tabulated for the three materials among them the 2 um thickness is best beam thickness for the switch for X-band applications. The switch offers best return loss (S 11) of-21.36 dB, insertion loss (S 12) of-0.147 dB, and isolation (S 21) of-52.04 dB at 8GHz. The switch presented in this paper is preferable in X-band applications.
In a MEMS based RF switch Cantilever beam is an element that is fixed at one end and free from another side. The electrostatic actuation process occurs on the beam and it will deflect from an original position. As the Electrostatic force increases, the z-component displacement produced in the beam is also increases. The beam is placed at the 2µm height from the ground substrate. The cantilever works as a switch which operates as ON or OFF. When the switch is ON its capacitance increases and when it is OFF its capacitance decreases. When applied actuation voltage reaches to Pull-in-voltage the cantilever connects with the ground electrode. This paper explores the concept of increase in flexibility, switching speed, low power consumption, low actuation voltage and reduction in squeeze film damping. The various types of cantilever switch provide discrete displacement corresponding to actuation voltage. In this paper we simulated the cantilever switch with various shapes. The simulation is done using COMSOL MULTIPHYSICS software.