The representation of memristor model in MATLAB and Simulink environment. Short paper. (original) (raw)
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The memristor has quite a reputation as a missing circuit element. It is a powerful candidate for next-generation applications after being first implemented in HP's laboratories. At this point, mathematical models were needed for the analysis of the memristor, and a lot of studies were done on this subject. In this chapter, mathematical modeling and simulations of the memristor device have been emphasized. Firstly, linear drift and nonlinear drift models have been described on the basic HP model. The window functions used in the nonlinear drift model have been widely examined. Different from HP model, the Simmons tunnel barrier and the threshold adaptive memristor model (TEAM) have been also mentioned. As a result, the most widely used modeling techniques have been described in detail.
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Memristor is a novel device which act as forth fundamental circuit element envisioned by Prof. Chua in 1971. Memristor devices has great interest in research ranging from memory and logic to neuromorphic systems due to its several advantages: nonvolatality, good scalability, compatibility with CMOS technology. We study the ongoing models of memristor and compare them with known device specifications In the process of Memristor modelling using finite element, there is initial innovative approach is to implement basic model of it with the help of device modeling and simulation tool Comsol multiphysics 4.4. The successful modeling and simulation of Memristor will further lead to use for SPICE based circuit design. KeywordsComsol multiphysics 4.4, SPICE, Memristor
1 SPICE Modeling of Memristor and Memristive Systems : A Review
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Memristor, the fourth fundamental passive circuit element, was first postulated by Prof. Leon Chua in 1971. Physical implementation of novel device Memristor and its mathematical model was first demonstrated by HP Labs research team in 2008.Memristor is getting a considerable attention due to its diversified areas of applications from computing to neuromorphic areas. For its reliable implementation in complex circuits various models are discussed. This paper is a brief review on Memristive systems such as current controlled Memristive system (CCMS) and voltage controlled Memristive system (VCMS). A comparative study of different SPICE modeling of memory resistor (Memristor):Non-linear dopant drift model, linear dopant drift model is discussed in this paper.
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Since the fourth fundamental element (Memristor) became a reality by HP labs, and due to its huge potential, its mathematical models became a necessity. In this paper, we provide a simple mathematical model of Memristors characterized by linear dopant drift for sinusoidal input voltage, showing a high matching with the nonlinear SPICE simulations. The frequency response of the Memristor's resistance and its bounding conditions are derived. The fundamentals of the pinched i-v hysteresis, such as the critical resistances, the hysteresis power and the maximum operating current, are derived for the first time.
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Memristor as a fourth fundamental circuit element was first postulated by Prof. Leon Chua in 1971.The physical implementation of this device was developed by HP team in 2008.Thereafter memristor as a fundamental circuit element has shown tremendous potential for development of analog and digital circuit. To design circuits with memristors, it is essential to understand the memristor behavior with a simulator.SPICE is a general purpose simulator which is used in the analysis of integrated circuits. This paper will discuss memristor behavior with LTspice simulator which is a popular version of SPICE and implement Memristor model for the analysis of MC(Memristor Capacitor) circuits. Index Terms: Memristor, LTspice, MC circuits
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Modeling of memristor devices is essential for memristor based circuit and system design. This chapter presents a review of existing memristor modeling techniques and provides simulations that compare several existing models to published memristor characterization data. A discussion of existing models is presented that explains how the equations of each relate to physical device behaviors. The simulations were completed in LTspice and compare the output of the different models to current–voltage relationships of physical devices. Sinusoidal and triangular pulse inputs were used throughout the simulations to test the capabilities of each model. The chapter is concluded by recommending a more generalized memristor model that can be accurately matched to several different published device characterizations. This generalized model provides the potential for more accurate circuit simulation for a wide range of device structures and voltage inputs. 12.
Advanced Memristor Model with a Modified Biolek Window and a Voltage-Dependent Variable Exponent
Informatyka Automatyka Pomiary w Gospodarce i Ochronie Środowiska, 2018
The main idea of the present research is to propose a new nonlinear ionic drift memristor model suitable for computer simulations of memristor elements for different voltages. For this purpose, a modified Biolek window function with a voltage-dependent exponent is applied. The proposed modified memristor model is based on Biolek model and due to this and to the use of a voltage-dependent positive integer exponent in the modified Biolek window function it has a new improved property - changing the model nonlinearity extent dependent on the integer exponent in accordance with the memristor voltage. Several computer simulations were made for soft-switching and hard-switching modes and also for pseudo-sinusoidal alternating voltage with an exponentially increasing amplitude and the respective basic important time diagrams, state-flux and i-v relationships are established.
Journal of Circuits, Systems, and Computers, 2010
Memristor had been¯rst theorized nearly 40 years ago by Prof. Chua, as the fourth fundamental circuit element beside the three existing elements (Resistor, Capacitor and Inductor) but because no one has succeeded in building a memristor, it has long remained a theoretical element. Some months ago, Hewlett-Packard (hp) announced it created a memristor using a TiO 2 =TiO 2ÀX structure. In this paper, the characteristics, structures and relations for the invented hp's memristor are brie°y reviewed and then two general SPICE models for the charge-controlled and°ux-controlled memristors are introduced for the¯rst time. By adjusting the model parameters to the hp's memristor characteristics some circuit properties of the device are studied and then two important memristor applications as the memory cell in a nonvolatile-RAM structure and as the synapse in an arti¯cial neural network are studied. By utilizing the introduced models and designing the appropriate circuits for two most important applications; a nonvolatile memory structure and a programmable logic gate, circuit simulations are done and the results are presented. . Downloaded from www.worldscientific.com by LOUISIANA STATE UNIVERSITY TROY H MIDDLETON LIBRARY -SERIALS DEPARTMENT on 11/29/12. For personal use only.
SPICE Simulation of Memristor Series and Parallel
SAMRIDDHI : A Journal of Physical Sciences, Engineering and Technology, 2017
Memory Resistors also known as Memristors, is a nonlinear resistor with memory. It is the fourth basic circuit element except resistor, capacitor and an inductor. The capability of memorizing its resistance makes its useful for designing of non volatile memory and in neural networks. This paper aims at study of Memristors characteristics. We first analyze and model the characteristics of Memristor with HSPICE and then study its behavior for series and parallel combination.