Electron holography study of voids in self-annealed implanted silicon (original) (raw)

The characterization of defects produced during self-annealing implantation of P + ions in silicon is of great interest for the realization of good quality p± n junctions in silicon and to understand the peculiarity of beam± solid interactions occurring during implantation performed under the conditions of rather high current and power density. High-resolution electron holography is employed here to study the three-dimensional con® guration of nanometre-size voids obtained by P + ion bombardment of a silicon wafer. Reconstructed phase di erence information has been used to obtain maps in which the phase distribution gives a qualitative topography of the cavity shape as well as quantitative measurements of the depth variations.