Large-Area Position-Sensitive Detector Based on Amorphous-Silicon Technology (original) (raw)
1993, Amorphous Silicon Technology-1993
We have developed a rectangular dual-axis large area Position Sensitive Detector (PSD), with 5 em x 5 em detection arca, based on PIN hydrogenated amorphous silicon (a-Si:H) technology, produced by Plasma Enhanced Chemical Vapor Deposition (PECVO). The metal. eontacts are located in the four edges of the detected area, two of them located on the back side of the ITO/PIN/Al structure and the others two loeated in the front side. The key factors of the detectors resolution and linearity are the thickness uniformity of the different layers, the geometry and the contacts location. Besides that, edge effects on the sensor's comer disturb the linearity of the detector. In this paper we present results concerning the linearity of the detector as well as its optoelectronic characteristics and the role of the i-Iayer thickness on the final sensor performances.
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