Epitaxial Growth of P Atomic Layer Doped Si Film by Alternate Surface Reaction of PH3and Si2H6on Strained Si1-xGex/Si (original) (raw)

2006 International SiGe Technology and Device Meeting, 2006

Masao SakurabaMasao Sakuraba

Abstract

In this work, in order to improve the abruptness, P atomic layer formation and P atomic layer doping in Si epitaxial growth using Si2H6 by ultraclean low pressure CVD (LPCVD) and its electrical characteristics were investigated

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