Enhanced Photoluminescence of Multiple Two-Dimensional van der Waals Heterostructures Fabricated by Layer-by-Layer Oxidation of MoS2 (original) (raw)
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Distinct Photoluminescence in Multilayered van der Waals Heterostructures of MoS2 /WS2 /ReS2 and BN
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van der Waals heterostructures of (TMDL=1/BNL=1-4/TMDL=1/BNL=1-4), [TMD = MoS2, WS2, and ReS2] are grown on c-plane sapphire substrate by pulsed laser deposition under slow kinetic condition. The heterostructure systems show strong emission around 2.3 eV and subsidiary peaks around 2.8, 1.9, 1.7 and 1.5 eV. BN and TMDs forms type-I heterojunction and the emission peaks observed are explained in terms of various band to band recombination processes and considering relative orientation of Brillouin Zones. The emission peak around 2.3eV is promising for solar and photovoltaic application. The observation is almost similar for three different heterostructure systems.
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Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures.
Van der Waals Heterostructures for device Applications
SAMRIDDHI : A Journal of Physical Sciences, Engineering and Technology, 2021
Advent of two-dimensional (2D) materials owing to their extraordinary properties can revolutionize the field of nano-electronics. Experimental advancements have now made it possible to stack different 2D layers on top of each other to form a single system. Due to van der Waals bonding between the layers, the properties of each layer are not perturbed much. It helps in generating new functionalities for nano-electronics applications. The present paper focuses on the application of van der Waals heterostructure.
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Two dimensional (2D) van der Waals heterostructures (vdWHs) have their unique potential in facilitating the stacking of layers of different 2D materials for optoelectronic devices with superior characteristics at a reduced cost. However, the fabrication of large area all-2D heterostructures is still challenging towards realizing practical devices. In the present work, we have demonstrated a rapid yet simple, impurity free and highly efficient sonication-assisted chemical exfoliation approach to synthesize hybrid vdWHs based on 2D molybdenum disulphide (MoS$_2$) and tungsten disulphide (WS$_2$), with high yield. Microscopic and spectroscopic studies have confirmed the successful exfoliation of layered 2D materials and formation of their hybrid heterostructure. The co-existence of 2D MoS2 and WS2 in the vdW hybrid is established by optical absorption and Raman shift measurements along with their chemical stiochiometry determined by X-ray photoelectron spectroscopy. The spectral respon...
Light Generation and Harvesting in a van der Waals Heterostructure
ACS Nano, 2014
Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of semiconducting transition metal dichalcogenides MoS 2 or WSe 2 have been proposed as promising channel materials for field-effect transistors (FETs). Their high mechanical flexibility, stability and quality coupled with potentially inexpensive production methods offer potential advantages compared to organic and crystalline bulk semiconductors. Due to quantum mechanical confinement, the band gap in monolayer MoS 2 is direct in nature, leading to a strong interaction with light that can be exploited for building phototransistors and ultrasensitive photodetectors. Here, we report on the realization of light-emitting diodes based on vertical heterojunctions composed of n-type monolayer MoS 2 and p-type silicon. Careful interface engineering allows us to realize diodes showing rectification and light emission from
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Nano Research, 2020
Monolayer MoS 2 is a direct band gap semiconductor with large exciton binding energy, which is a promising candidate for the application of ultrathin optoelectronic devices. However, the optoelectronic performance of monolayer MoS 2 is seriously limited to its growth quality and carrier mobility. In this work, we report the direct vapor growth and the optoelectronic device of verticallystacked MoS 2 /MoSe 2 heterostructure, and further discuss the mechanism of improved device performance. The optical and high-resolution atomic characterizations demonstrate that the heterostructure interface is of high-quality without atomic alloying. Electrical transport measurements indicate that the heterostructure transistor exhibits a high mobility of 28.5 cm 2 /(V•s) and a high on/off ratio of 10 7. The optoelectronic characterizations prove that the heterostructure device presents an enhanced photoresponsivity of 36 A/W and a remarkable detectivity of 4.8 × 10 11 Jones, which benefited from the interface induced built-in electric field and carrier dependent Coulomb screening effect. This work demonstrates that the construction of two-dimensional (2D) semiconductor heterostructures plays a significant role in modifying the optoelectronic device properties of 2D materials.
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arXiv: Mesoscale and Nanoscale Physics, 2020
We investigated multilayer plates made by exfoliation from a high-quality MoS$_2$ crystal and found thatthey represent a van der Waals homostructure consisting of a bulk core and a few monolayers on itssurface. This architecture comprising elements with different electron band structure leads to specificluminescence, when the broad emission band from the core is cut by the absorption peaks of strongexciton resonances in the monolayers. The exfoliated flakes exhibit strong optical anisotropy. Wehave observed a conversion of normally incident light polarization to 15~% in transmission geometry.This background effect is due to fluctuations of the c axis relative to the normal, whereas thepronounced resonance contribution is explained by the polarization anisotropy of excitons localizedin monolayer bands.