InSb films grown on the V-grooved Si(001) substrate with InSb bilayer (original) (raw)

Japanese Journal of Applied Physics, 2011

High-temperature growth of heteroepitaxial InSb films on Si(111) substrate via the InSb bi-layer

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Effect of Initial In Coverage for Preparation of InSb Bilayer on Electrical Properties of InSb Films Grown By Surface Reconstruction Controlled Epitaxy

2011

Growth of high-quality InSb films on Si(111) substrates without buffer layers

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Growth and characterization of In-Sb thin film structure

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Indian Journal of Pure & Applied Physics, 2007

Influence of Composition Ratio of In and Ga Atoms of InGaSb Bi-layer on Growth of InGaSb Thin Films on Si(111) Substrate

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2013

Role of In(4×1) superstructure on the heteroepitaxy of InSb on Si(111) substrate

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Growth temperature effect on the heteroepitaxy of InSb on Si(111)

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Growth Nature of InSb Channel Layer on Heteroepitaxial Films of InGaSb Layer on GaSb/Si(111)-√3 × √3-Ga Surface Phase

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Early stages of low temperature epitaxial growth of InSb on GaAs

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Crystal Research and Technology, 2005

Morphology evolution of InSb island grown on InP substrates by atomic layer molecular beam epitaxy

Francesca Peiró

Microelectronic Engineering, 1998

Twinned InSb molecular layer on Si() substrate

Surface Science, 2001

Homo- and hetero-epitaxial growth of InSb and AlxIn1−xSb layers by molecular beam epitaxy

Sattar Mirzakuchaki

2013 21st Iranian Conference on Electrical Engineering (ICEE), 2013

Evolution of structural and electronic properties of highly mismatched InSb films

H Saqib

Journal of Applied Physics, 2000

Cleaning method of InSb [1̄1̄1̄] B of n-InSb [111] A/B for the growth of epitaxial layers by liquid phase epitaxy

Shikhamir Eminov

Journal of Semiconductors, 2011

The Initial Stages of MBE Growth of InSb on GaAs(100) - A High Misfit Heterointerface

Jen-Inn Chyi

MRS Proceedings, 1989

Effects of TMSb overpressure on InSb surface morphology for InSb epitaxial growth using low pressure metalorganic chemical vapor deposition

Y. Nanishi

Journal of Crystal Growth, 2014

Bulk growth of InSb crystals for infrared device applications

P. Ramasamy

Journal of Crystal Growth, 1999

Annealing of Sputtered InSb Thin Film for III-V Semiconductor Devices Applications

Karam Sharshar

Journal of Engineering Science and Military Technologies, 2017

Vacancy island nucleation and inverse growth of InSb(110)

Marco Peloi

Physical Review B, 1995

Material properties of InAlAs layers grown by MBE on vicinal (111)B InP substrates

Anna Vila, A. Cornet

Journal of Crystal Growth, 1999

Microstructural features, electrical and optical properties of nanostructured InSb thin films deposited at 373 K

Yoshitsugu Tomokiyo

Indian Journal of Engineering and Materials Sciences, 2006

Growth of truncated pyramidal InSb nanostructures on GaAs substrate

Suwat Sopitpan

Journal of Crystal Growth, 2017

Mesa etching characterization of insb for high density image array applications

Jiunnjye Luo

Journal Chinese Institute of Engineers, 2007

Growth mechanism and microstructure of low defect density InN (0001) In-face thin films on Si (111) substrates

George Dimitrakopulos

Journal of Applied Physics, 2013

Heteroepitaxial growth of InSb directly on (001) GaAs without any buffer layer using growth rate ramping by MBE

Sattar Mirzakuchaki

20th Iranian Conference on Electrical Engineering (ICEE2012), 2012

Formation of porous layers on InSb(100) by anodization

Patrik Schmuki

physica status solidi (a), 2003

Passivation of InSb surface for manufacturing infrared devices

Azizollah Shafiekhani

Infrared Physics & Technology, 2008

Structure of the indium-rich InSb(001) surface

Lev Kantorovich

Physical Review B, 2010

Oxide Removal and Selective Etching of In from InSb(100) with TiCl 4

Willy Rachmady

The Journal of Physical Chemistry C, 2011

Wet Etching Characterization of InSb for Thermal Imaging Applications

Jiunn-Jye Luo

Japanese Journal of Applied Physics, 2006

Heteroepitaxial growth of strained and relaxed layers of InAs on InP investigated by RHEED and HRTEM

M. Gendry

Applied Surface Science, 1992