Fabrication of ZnO Nanoparticles in Silica Glass by Ion Implantation Combined with Thermal Oxidation (original) (raw)

Journal of the Vacuum Society of Japan

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Impurity Doping into SiC Semiconductor by Means of lon Implantation

Hyomen Kagaku

Research and development of ion implantation technique for SiC semiconductor have been performed. Hotimplantation of P ions into 6H-SiC raises the electron concentration in P-implanted n-type layers, showing that the hotimplantation enhances the electrical activation of P donors. The hole concentration in Al ion implanted 6H-SiC is found to increase due to co-implantation of C ions. This fact demonstrates that the electrical properties of Al-implanted p-type layers are improved by the C co-implantation. Using the ion implantation methods , SiC-based metal-oxidesemiconductor field-effect-transistors (MOSFETs) have been successfully fabricated. These results indicate that hot-and C co-implantations are quite useful for the fabrication of SiC devices.

Catalyst Metal Deposition into Porous Silicon Layer

IEEJ Transactions on Sensors and Micromachines, 2005

In order to prevent catalyst layer collapse formed onto a porous silicon layer, a new method was developed. We have proposed a novel miniaturized fuel cell using monolithically fabricated silicon electrodes and power generation was verified though the output was small. Pore diameter and porosity of the porous silicon layer which works as a diffusion layer and a catalyst support layer was enlarged for easy penetration of electrolyte and fuel, but the porous layer was collapsed when the catalyst metals were deposited onto the porous layer. It is assumed that the porous layer shrinks because platinum, whose atomic size is smaller than the size of silicon, replaces silicon at equal stoichiometric ratio in a plating bath using Pt 4+ ion. Pt 2+ ion was mixed into the plating bath and the collapse of the porous layer was prevented.

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