Optical and structural characterization of silicon‐carbon‐nitride thin films for optoelectronics (original) (raw)

physica status solidi c, 2010

Abstract

Amorphous a‐SiCN:H films were deposited by radio frequency Plasma Enhanced Chemical Vapour Deposition (PECVD) at 13.56 MHz from silane‐methane‐ammonia (SiH4+CH4+NH3) gaseous mixture. Morphological, structural and optical characterization of a‐SiCN:H in correlation with process parameters was done. High growth rate of films was influenced mainly by presence of ammonia and silane in technological process. FTIR spectra analysis of films revealed the influence of gaseous mixture content in PECVD process on their structure. The refractive index and optical gap depended on elemental composition of films. The total reflectivity of a‐SiCN:H on monocrystalline silicon revealed increase with the decrease in carbon and nitrogen content. The a‐SiCN:H films are smooth, homogeneous, chemically inert and wear resistive and also hydrogen rich, which is important from the application point of view (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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