Electron tunneling through single self‐assembled InAs quantum dots coupled to nanogap electrodes (original) (raw)

physica status solidi c, 2008

Abstract

We have investigated electronic properties of self‐assembled InAs quantum dots (QDs) grown on GaAs surfaces by using metallic Au and Al leads with narrow gaps. The fabricated junctions with Au nanogap electrodes show single electron tunneling behaviors. When coupling between electrons in the QDs and the electrodes is strong, Kondo effect with relatively high Kondo temperature TK of 10‐15 K is observed. The samples with superconducting (SC) Al electrodes also exhibit clear Coulomb blockade effects. Furthermore, clear suppression in conductance is observed around VSD = 0 V for a voltage range of 4Δ /e at T = 40 mK, where Δ is the SC energy gap of Al, demonstrating successful fabrication of the SC‐QD‐SC junction in the self‐assembled InAs QD system. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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