Down-shifting by quantum dots for silicon solar cell applications (original) (raw)

Solar Cells and Light Management, 2020

Abstract

Abstract The present chapter describes the influence of quantum dots (QDs) on the performance of commercially available, as well as in-house fabricated planar and nanotexturized Si-based solar cells. The experimental observations indicate that higher power conversion efficiency values can be achieved by exploiting the Stokes or down-shifting effect of different varieties of QDs. The down-shifting effect of the aforementioned nanocrystals is reflected in the external quantum efficiency that exhibits a better response in the UV range, due to the absorption of the UV photons by the QDs involved, and the subsequent emission at longer wavelengths that are more suitable for polycrystalline and single crystal silicon (c-Si) absorption. In view of the availability of precursors for a number of photoluminescent QDs, as well as the robustness and relative simplicity of the associated synthesis schemes, it is warranted to conclude that semiconductor QDs can be construed as a viable alternative to improve the performance of photovoltaic devices.

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