Enhancement of physical properties in ZrO₂/Ga₂O₃ co-substituted indium oxide (original) (raw)

The effect of coupled substitution of Zr 4+ /Ga 3+ for In 3+ in In 2 O 3 upon the structural, electrical and optical properties has been studied. The In 2-2x Ga x Zr x O 3 solid solution with bixbyite structure has been synthesized for 0 ≤ x < 0.15. A decrease in resistivity for the composition x = 0.025 (ρ RT = 5.5x10-3 Ω.cm) by approximately one order of magnitude if compared to In 2 O 3 (ρ RT = 2.2x10-2 Ω.cm) was obtained. The maximum percent reflectance around 500 nm is lowered by 15% with respect to pure In 2 O 3. These novel oxides show their potential as transparent conductors.