Enhancement of physical properties in ZrO2/Ga2O3 co-substituted indium oxide (original) (raw)
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Enhancement of physical properties in ZrO2/Ga2O3 co-substituted indium oxide
Studia Universitatis Babeș-Bolyai Chemia
The effect of coupled substitution of Zr 4+ /Ga 3+ for In 3+ in In 2 O 3 upon the structural, electrical and optical properties has been studied. The In 2-2x Ga x Zr x O 3 solid solution with bixbyite structure has been synthesized for 0 ≤ x < 0.15. A decrease in resistivity for the composition x = 0.025 (ρ RT = 5.5x10-3 Ω.cm) by approximately one order of magnitude if compared to In 2 O 3 (ρ RT = 2.2x10-2 Ω.cm) was obtained. The maximum percent reflectance around 500 nm is lowered by 15% with respect to pure In 2 O 3. These novel oxides show their potential as transparent conductors.
Powder Metallurgy and Advanced Materials, 2018
In the present work the effect of zirconium doping (1.5 at.%) on the structural and optical properties of indium zirconium oxide was studied. Zr-doped indium oxides were prepared by using two different methods, solid state reactions and sol-gel technique. The compositions with bixbyite structure have been synthesized by two different methods, solid state reactions in air and sol-gel process. X-ray powder diffraction (XRPD) used for phases analysis confirm the validity of the cubic bixbyite-type structure of In2O3. The optical properties of the prepared composition were considered in terms of their diffuse reflectance spectra (DRS). The morphology of crystals was evidenced by SEM analyses and reveal agglomeration of particles with their size ranges in the micrometer domain. Introduction Transparent conducting oxides (TCOs) are an important class of materials which have attracted much attention in the last years due to their main properties, low resistivity and high optical transparen...
Solid State Communications, 2005
The study of coupled substitution of In 3C by Sn 4C /M 2C species in In 2 O 3 has allowed In 2K2x Sn x M x O 3 solid solutions with bixbyite structure to be synthesized for MZNi, Mg, Zn, Cu and Ca. The latter exhibit a rather broad homogeneity range and are characterized by an ordered cationic distribution. More importantly, these novel oxides are transparent conductors, and among them the Zn and Cu phases show a great potential, since one observes a semi-metallic behavior with conductivity up to 3!10 2 and 3!10 3 (U cm) K1 , respectively, to be compared to 2!10 3 (U cm) K1 for reduced ITO. Moreover, in contrast to the latter no reducing conditions are required for reaching such performances. q
The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes
Materials
The development of optoelectronic devices based on flexible organic substrates substantially decreases the possible process temperatures during all stages of device manufacturing. This makes it urgent to search for new transparent conducting oxide (TCO) materials, cheaper than traditional indium-tin oxide (ITO), for the low-temperature deposition of transparent electrodes, a necessary component of most optoelectronic devices. The article presents the results of a vertically integrated study aimed at the low-temperature production of TCO thin films based on a zinc-indium oxide (ZIO) system with acceptable functional characteristics. First, dense and conducting ceramic targets based on the (100-x) mol% (ZnO) + x mol% (In2O3) system (x = 0.5, 1.5, 2.5, 5.0, and 10.0) were synthesized by the spark plasma sintering method. The dependences of the microstructure and phase composition of the ZIO ceramic targets on the In2O3 content have been studied by powder X-ray diffraction, scanning ele...
Inorganic Chemistry, 2010
A series of In-Zn formate mixtures were investigated as potential precursors to amorphous In-Zn-oxide (IZO) for transparent conducting oxide (TCO) applications. These mixtures were prepared by neutralization from formic acid and characterized by elemental analysis, IR spectroscopy, powder X-ray diffraction, and thermogravimetry-differential scanning calorimetry (TG-DSC) measurements. Thermal analysis revealed that a mixture of In and Zn formates reduced the overall decomposition temperature compared to the individual constituents and that OH-substitution enhanced the effect. In terms of precursor feasibility, it was demonstrated that the decomposition products of In-Zn formate could be directed toward oxidation or reduction by controlling the decomposition atmosphere or with solution acid additives. For TCO applications, amorphous IZO films were prepared by ultrasonic spray deposition from In-Zn formate solutions with annealing at 300-400°C.
Transparent conducting Cr doped indium oxide thin films (In 2 O 3 :Cr) were deposited on glass substrates by flash evaporation method and the influence of Cr doping concentrations on the structural and optical properties of the films had been investigated. The as deposited films exhibited amorphous in nature, after which it changed to cubic crystalline when the films annealed at 250 o C for 2 hrs. The annealed films, exhibited an average optical transmittance of 50% in the IR region with a band gap of 2.9 eV.
Preparation and characterization of indium oxide (In2O3) films by activated reactive evaporation
Bulletin of Materials Science, 1997
The electrical and optical properties of In z O 3 films prepared at room temperature by activated reactive evaporation have been studied. Hall effect measurements at room temperature show that the films have a relatively high mobility 15 cm2v-Xs-1, high carrier concentration 2-97 × 102°/cm 3, with a tow resistivity p = 1.35 x 10-3ohmcm. As-prepared film is polycrystalline. It shows both direct and indirect allowed transitions with band gaps of 3'52 eV and 2.94eV respectively.
Electrochimica Acta, 2001
To optimize the physical properties of In 2 O 3 -ZnO pulsed laser deposited thin films, we embarked on a systematic study of their microstructural characterization and transport properties. We found that the electrical properties of the films are greatly governed by their microstructure, which evolves from granular to fiber and to columnar textures, as we go from cubic In 2 O 3 to hexagonal ZnO via Zn k In 2 O k + 3 layered structure in the binary In 2 O 3 -ZnO phase diagram. Maximum conductivity is reached for a Zn/(Zn+ In) = 0.5 (at.) composition having a layered Zn k In 2 O k + 3type structure with essentially k =2, which was synthesized for the first time. Electrochemical measurements show that this film can be used as a transparent electrode in electrochromic devices operating either in an aqueous or organic medium.
Materials Chemistry and Physics, 2002
Transparent and conductive indium oxide films have been obtained by reactive evaporation of indium in partial oxygen pressure. The oxygen partial pressure, the substrate temperature and the deposition rate have been used as variable parameters. Post-deposition annealing treatment in air or argon ambient have also been used. During the deposition process, different mechanisms with opposite effects are in competition. Thus, oxygen vacancy density which is proportional to the carrier density decreases when the oxygen partial pressure increases, while the crystalline quality of the films improve. Therefore, an experimental domain can be defined where the films have more or less similar properties: a transmittance higher than 90% and a conductivity of 10 +3-3 × 10 +3 (cm) −1. In the experimental environment, the optimal conditions used can be summarised as follows-partial oxygen pressure P 0 : 8×10 −2 Pa < P 0 < 4 × 10 −1 Pa; substrate temperature T s : 200 • C < T s < 250 • C; In 2 O 3 deposition rate V d : 0.05 nm s −1 < V d < 0.1 nm s −1 .