Spontaneous emission control in quantum well laser diodes (original) (raw)

Abstract

Spontaneous emission control has been achieved in GaAs/AlGaAs quantum well lasers by the use of Bragg reflectors to define a micro-cavity perpendicular to the quantum wells. The room temperature emission is inhibited whilst below 130K there is an enhancement. These changes to the spontaneous recombination process directly effect the threshold current producing a 25% reduction at room temperature. Theoretical modeling of the lasers is in agreement with the experimental results and highlights the effect of the micro-cavity in altering the overlap of the electromagnetic field with the quantum well dipole oscillators.

Key takeaways

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  1. Spontaneous emission control achieves a 25% reduction in threshold current at room temperature.
  2. Bragg reflectors create a micro-cavity that alters spontaneous emission rates in quantum well lasers.
  3. Threshold current behavior varies with temperature, converging below 130K for micro-cavity and control lasers.
  4. Theoretical modeling corroborates experimental results, emphasizing electromagnetic field overlap with dipole oscillators.
  5. The purpose is to present methods for inhibiting spontaneous emission in GaAs/AlGaAs quantum well lasers.

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References (8)

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