Enhanced Operating Range of WDM PON Implemented by Using Uncooled RSOAs (original) (raw)

Direct 10-Gb/s Modulation of a Single-Section RSOA in PONs With High Optical Budget

IEEE Photonics Technology Letters, 2000

We experimentally demonstrate 10-Gb/s operation of a reflective semiconductor optical amplifier (RSOA) for data transmission in passive optical networks, with optical power budgets of up to 28 dB. Besides a passive adaptation for the electrooptical response of the semiconductor device, neither active electronic equalization nor optical offset filtering was applied to enhance the modulation bandwidth of the RSOA. Error-free transmission without using error correcting codes can be obtained even for low RSOA input power values of 20 dBm.

10-Gb/s Operation of RSOA for WDM PON

IEEE Photonics Technology Letters, 2008

We report on the 10-Gb/s operation of the reflective semiconductor optical amplifier (RSOA) for the next-generation wavelength-division-multiplexed passive optical network (WDM PON). The bandwidth of the RSOA used in this experiment is merely 2.2 GHz. Nevertheless, a clear eye opening is obtained at 10 Gb/s by using the electronic equalizer processed offline. We investigate the impacts of the network's operating conditions (such as the injection power to the RSOA and the fiber length) on the performances of these equalizers. The results show that the RSOA-based WDM PON is operable at 10 Gb/s and the maximum reach can be extended to >20 km with the help of the forward error correction codes.

Wavelength reuse WDM-PON using RSOA and modulation averaging

Optics Communications, 2019

This work describes the first demonstration of a wavelength reuse wavelengthdivision multiplex passive optical network (WDM-PON) with employing passive modulation averaging for data erasure/modulation cancellation. We present a simple, low-cost, colorless bidirectional communication architecture that uses reflective semiconductor optical amplifiers (RSOA) and incoherent light communication. Successful error-free (BER<1e-9) simultaneous bidirectional communication has been demonstrated in links up to 30 km at 1.25 Gbps using 100-GHz channel spacing and bit-error rates (BER<1e-5) with 50-GHz channel spacing.

Characterization of uncooled RSOA for upstream transmission in WDM reflective PONs

Optics Express, 2012

We investigate on the uncooled RSOA driving parameters in WDM reflective PONs, focusing on an upstream path at 1.25 Gbit/s using pure binary modulation. We show how the optimal values change using direct-detection or self-coherent receivers. In particular, for the latter, the driving point optimization allows a gain of more than 3 dB in terms of ODN loss compared to a standard On-Off Keying, generating a quasi-PSK modulation. We also address operating temperature and wavelength dependence issues.

Effects of Reflection in RSOA-Based WDM PON Utilizing Remodulation Technique

Journal of Lightwave Technology, 2009

We investigate the effects of the discrete reflection on the performances of upstream and downstream signals in the wavelength-division-multiplexed passive optical network (WDM PON) implemented in a single-fiber loopback configuration using the reflective semiconductor optical amplifiers (RSOAs). We first analyze the optical beat interference (OBI) noise caused by the discrete reflection, and clarify the relation between the reflection tolerance and the network's operating conditions such as the RSOA gain, the link loss, and the location of the reflection point, etc. The results show that the impact of the reflection can be expressed by using the effective crosstalk level. We then measured the reflection tolerance of the RSOA-based WDM PON, in which the downstream signal operating at 1.25 Gb/s is remodulated by the RSOA at the subscriber's site for the transmission of 155-Mb/s upstream signal. The reflection tolerances are measured to be in the range of 42 to 35 dB for the downstream signals and 29 to 19 dB for the upstream signals, depending on the RSOA gain. These small reflection tolerances are caused by the fact that the reflected light is re-amplified by the RSOA. We also show that the dependence of the reflection tolerance on the RSOA gain can be explained by using the effective crosstalk level. These results are used to evaluate the impacts of the unwanted discrete reflections on the RSOA-based WDM PON.

High performance polarisation independent reflective semiconductor optical amplifiers in the S, C, and L bands

IEEE Journal on Selected Areas in Communications, 2000

Polarisation independent strained bulk RSOAs have been fabricated in the S-band for the first time. In system tests at 1.25Gbit/s, the devices have been shown to operate over >60nm with large return Path Loss Capabilities (PLC). The devices are capable of providing >25dB PLC over a 60nm span and hence the combination of two RSOAs provides PLC of >25dB over a wavelength interval of >120nm (1470 nm to 1590 nm). The temperature performance of the C/L band device has also been studied and a PLC of >20dB has been shown at 60 • C.

C- and O-Band Operation of RSOA WDM PON Self-Seeded Transmitters up to 10 Gb/s [Invited]

Journal of Optical Communications and Networking, 2014

We propose a network-embedded colorless self-tuning transmitter for wavelength division multiplexed (WDM) networks based on self-seeding in reflective semiconductor optical amplifiers (RSOAs). We compare up to a 10-Gb/s data rate in either O-band or C-band operation. In particular, the transmitter exploits a two-Faraday rotator configuration to ensure polarization-insensitive operation and allowing for the exploitation of high-gain C-and O-band RSOAs, which present a very high polarization-dependent gain. Two different multiplexers and various lengths of drop fibers constituted the networkembedded transmitters in order to evaluate various dispersion load influence on cavity buildup. Moreover, transmission over standard single-mode feeder fiber has been evaluated both at 2.5 and 10 Gb/s to compare the performance in both bands, confirming the absence of chromatic dispersion penalties for the O-band operation.