Numerical Study of InGaN based Photovoltaic by SCAPs Simulation (original) (raw)
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The necessity to find new forms of renewable energy is very important and urgent nowadays. The renewable sources of energy derived from the sun are one of the promising options. The photovoltaic cells as one of renewable energy sources have been largely studied in order to obtain cheap, efficient and secure PV cells. The conversion efficiency is the most important property in the PV domain. Indium gallium nitride (InGaN) alloys offer great potential for high-efficiency photovoltaics. We present numerical simulations of GaN/InGaN heterojunction solar cells by SCAPs simulation. The calculation of characteristic parameters: short-circuit current density, open-circuit voltage, and conversion efficiency. So, these simulations study the effect of indium content and thickness in these parameters. While the maximum efficiency of a p-n GaN/InGaN heterojunction solar cell with 0.2 indium composition is 2.78%, above an indium composition of 20%, the modeled heterojunction devices do not operate as solar cells.
Journal of Applied Physics, 2010
In this study, we conducted numerical simulations with the consideration of microelectronic and photonic structures to determine the feasibility of and to design the device structure for the optimized performance of InGaN p-i-n single homojunction solar cells. Operation mechanisms of InGaN p-i-n single homojunction solar cells were explored through the calculation of the characteristic parameters such as the absorption, collection efficiency ͑͒, open circuit voltage ͑V oc ͒, short circuit current density ͑J sc ͒, and fill factor ͑FF͒. Simulation results show that the characteristic parameters of InGaN solar cells strongly depend on the indium content, thickness, and defect density of the i-layer. As the indium content in the cell increases, J sc and absorption increase while , V oc , and FF decrease. The combined effects of the absorption, , V oc , J sc , and FF lead to a higher conversion efficiency in the high-indium-content solar cell. A high-quality In 0.75 Ga 0.25 N solar cell with a 4 m i-layer thickness can exhibit as high a conversion efficiency as ϳ23%. In addition, the similar trend of conversion efficiency to that of J sc shows that J sc is a dominant factor to determine the performance of p-i-n InGaN solar cells. Furthermore, compared with the previous simulation results without the consideration of defect density, the lower calculated conversion efficiency verifies that the sample quality has a great effect on the performance of a solar cell and a high-quality InGaN alloy is necessary for the device fabrication. Simulation results help us to better understand the electro-optical characteristics of InGaN solar cells and can be utilized for efficiency enhancement through optimization of the device structure.
Modeling of InGaN p-n junction solar cells
Optical Materials Express, 2013
InGaN p-n junction solar cells with various indium composition and thickness of upper p-InGaN and lower n-InGaN junctions are investigated theoretically. The physical properties of InGaN p-n junction solar cells, such as the short circuit current density (J SC ), open circuit voltage (V oc ), fill factor (FF), and conversion efficiency (η), are theoretically calculated and simulated by varying the device structures, position of the depletion region, indium content, and photon penetration depth.
International Journal of Photoenergy, 2014
We have conducted numerical simulation of p-GaN/In0.12Ga0.88N/n-GaN, p-i-n double heterojunction solar cell. The doping density, individual layer thickness, and contact pattern of the device are investigated under solar irradiance of AM1.5 for optimized performance of solar cell. The optimized solar cell characteristic parameters for cell area of 1 × 1 mm2are open circuit voltage of 2.26 V, short circuit current density of 3.31 mA/cm2, fill factor of 84.6%, and efficiency of 6.43% with interdigitated grid pattern.
IJERT-High Performance InGaN Solar Cell from Numerical Analysis
International Journal of Engineering Research and Technology (IJERT), 2013
https://www.ijert.org/high-performance-ingan-solar-cell-from-numerical-analysis https://www.ijert.org/research/high-performance-ingan-solar-cell-from-numerical-analysis-IJERTV2IS100773.pdf The InGaN is recently developed a potential thin film solar cell material with the tunable band gap of 0.7 eV to 3.4 eV to utilize the maximum sun spectrum. In this work, InGaN solar cells have been designed and simulated to investigate the hidden potentiality of In x Ga 1-x N material. Numerical Analysis for the designed cells has been performed with AMPS (Analysis of Microelectronic and Photonic Structure) simulator targeted for high efficient single junction solar cells. The performance of In x Ga 1-x N single junction solar cells with different proportion of In and Ga content, thickness of each layer including various doping concentration and effect of back contact has been explored for a optimized ultra thin cell. A single junction In x Ga 1-x N solar cell has been proposed with conversion efficiency of 25.02% (Voc=0.925 V, Jsc=30.883 mA/cm 2, FF=0.876) having doping concentration of 1×10 16 cm-3 with 0.5 µm p-InGaN layer, 0.1 µm n-InGaN layer and Nical (Φ bL =1.3 eV) as a final back contact metal. Furthermore, it has been found that the normalized conversion efficiency of the proposed cell were linearly decreased with a gradient of-0.04/ºC of the operating temperature, which indicate better stability of the InGaN solar cell.
Study of simulations of double graded InGaN solar cell structures
2021
The performances of various configurations of InGaN solar cells are compared using nextnano software. Here we compare a flat base graded wall GaN/InGaN structure, with an InxGa1-xN well with sharp GaN contact layers, and an InxGa1-xN structure with InxGa1-xN contact layers, i.e. a homojunction. The doping in the graded structures are the result of polarization doping at each edge (10 nm from each side) due to the graded structure, while the well structures are intentionally doped at each edge (10 nm from each side) equal to the doping concentration in the graded structure. The solar cells are characterized by their open-circuit voltage, Voc, short circuit current, Isc, solar efficiency, η, and energy band diagram. The results indicate that an increase in Isc and η results from increasing both the fixed and the maximum indium compositions, while the Voc decreases. The maximum efficiency is obtained for the InGaN well with 60% In.
Chalcogenide Letters Vol. 19, No. 9, September 2022, p. 611 - 619, 2022
The present work aims to improve the power and the conversion efficiency of solar cells, using the PC1D simulator, to study the performances of the solar cells based on (InGaN). The paper focuses first on optimization of the technological and geometrical parameters such as doping and the thickness of the layers to investigate their influence on the conversion efficiency of these structures. Then, the paper evaluates the efficiency η for the solar cell with and without Anti-reflection coating ARC on textured surfaces to achieve a final increase of 22.5% of conversion efficiency compared to InGaN standard solar cells.
Optimization of semibulk InGaN-based solar cell using realistic modeling
Solar Energy, 2017
Due to its high absorption coefficient and variable bandgap, InGaN is being intensively studied for photovoltaic applications. Growth of thick homogenous InGaN absorbers is challenging due to relaxation, clustering, and transition from 2D to 3D growth. These issues can be avoided by a semibulk multilayer structure. In this work, we analyze InGaN-based semibulk-structured solar cells in detail. We show that for indium content lower than 15%, GaN interlayers' thickness has no influence on carrier transport due to the low barrier height. A conversion efficiency of 2.4% can be expected for this indium content. However, for higher indium content (15-30%), we show that the thinner the GaN interlayers, the better the conversion efficiency. Beyond 30% of indium, the conversion efficiency is hindered by the barriers' important height even for very thin thicknesses of GaN interlayers. We show also that, for semibulk structure, both growth direction (N-face and metal-face) have similar impact on efficiency. This theoretical study gives the guidelines for the fabrication of InGaN-based solar cells that can be used as a wide-bandgap top cell in multijunction solar cells.
Optimization of InGaN Solar cell
Sains Malaysiana, 2022
In this study, the indium gallium nitride (In x Ga 1-x N) p-n junction solar cells were optimized to achieve the highest conversion efficiency. The In x Ga 1-x N p-n junction solar cells with the whole indium mole fraction (0 ≤ x ≤ 1) were simulated using SCAPS-1D software. Optimization of the p-and n-In x Ga 1-x N layer's thickness and carrier density were also carried out. The thickness and carrier density of each layer was varied from 0.01 to 1.50 μm and 10 15 to 10 20 cm-3. The simulation results showed that the highest conversion efficiency of 23.11% was achieved with x = 0.6. The thickness (carrier density) of the p-and n-layers for this In 0.6 Ga 0.4 N p-n junction solar cell are 0.01 (10 20) and 1.50 μm (10 19 cm-3), respectively. Simulation results also showed that the conversion efficiency is more sensitive to the variations of layer's thickness and carrier density of the top pIn x Ga 1-x N layer than the bottom n-In x Ga 1-x N layer. Besides that, the results also demonstrated that thinner pIn x Ga 1-x N layer with higher carrier density offers better conversion efficiency.
IJERT-Simulation of multi-junction solar cells based on InGaN using AMPS-1D
International Journal of Engineering Research and Technology (IJERT), 2013
https://www.ijert.org/simulation-of-multi-junction-solar-cells-based-on-ingan-using-amps-1d https://www.ijert.org/research/simulation-of-multi-junction-solar-cells-based-on-ingan-using-amps-1d-IJERTV2IS110575.pdf During the past few years a great variety of multi-junction solar cells has been developed with the aim of a further increase in efficiency beyond the limits of single junction devices. InxGa1-xN is one of a few alloys that can meet this key requirement. In this paper, we designed series of InxGa1-xN multi-junction solar cells. Key properties of InxGa1-XN tandem solar cells (for two junctions up to six junctions) are simulated by using AMPS-1D software, including I-V characteristic, conversion efficiency, band structure etc. Our calculation shows that the efficiency can be improved from 10.09% for a single junction up to 40.05% for six junctions obtained in 1-sun AM1.5 illumination and at room temperature, using realistic material parameters..