Fast laser kinetic studies of the semiconductor-metal phase transition in VO2 thin films (original) (raw)

AIP Conference Proceedings, 1979

Abstract

We report the results of picosecond laser kinetic studies of the martensitic structural transformation in VO2 at 340 °K where it undergoes a first order phase transition from a semiconductor (T~Tt). The time resolved excited state response of thin VO2 films to 35 psec pulses of optical gap photons (1.18ev) exhibited an initially coherent-like response and relaxed to a specific non-equilibrium state. The latter appears to be an alternative to the normal thermally excited state suggesting that the martensitic phase transition can be preempted by fast gap excitations.

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